2N956 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2K1420

Abstract: 2N1507 2n1420
Contextual Info: kmse. ?n637 m w '¿am. m i sua 2N956, 2K1420 2N1&0? 2l\h613. ¿«1711 N-P-N SILICON TRANSISTORS ty p e s B U L L E T IN NO . DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 19 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N1711

Abstract: 2N956 2N718A X10-4 2N1711N
Contextual Info: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C

Contextual Info: 2N956 General purpose transistor 8.00 Transistors Transistors Bipolar Si NPN Low-Pow. Page 1 of 1 Enter Your Part # Home Part Number: 2N956 Online Store 2N956 Diodes General purpose transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N1420

Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
Contextual Info: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N956

Abstract: 2N718A 718a
Contextual Info: 2N718A 2N956 SILICON PLANAR NPN AM PLIFIER S AN D SWITCHES The 2N 718A and 2N 956 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed switching and am plifier applications. ABSOLUTE M A X IM U M RATINGS VcBO

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18

2N1711

Abstract: 2N1711 MOTOROLA 2N956 2N956 MOTOROLA 2N3019 2N718 2N718A
Contextual Info: 2N718A 2N956 M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N718A 2N956 2N1711 VCER 50 Vdc Collector-Base Voltage v CBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ Tc = Derate above 25°C

2N956

Abstract: 2N718A N718A
Contextual Info: 3QE D • 7^5 3 7 aoaioa? 5 ■ T~- 3 5 -ic] SGS-THOMSON 2 N 718A 2 N 956 iO L iO IT G M O O S S G S-THOMSON AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten­ ded for high-speed switching and amplifier applica­

2M1711

Abstract: 2N915 2N1613 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N718A 2N720A
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptal mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 VCE(SAT) hFE0 c h (MHz) ts tOFF IC/IB MNMAX (•A) <V) MAX 50* 80 50 40 40/120 40/50/200 50/200 150 150 10 10

2N1711

Abstract: 2N956 2N1711 M
Contextual Info: 2N718A 2N956 M AXIM UM R A T IN G S Rating Symbol 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 TO-206AA I 2N1711 C ollector-E m itter Voltage VCER 50 Collector-Base Voltage v CBO 75 Em itter-Base Voltage v EBO Unit Vdc 1 7.0 ; Vdc Vdc Total Device D issipation f t T /\ = 25:C

2N1711 MOTOROLA

Abstract: 2n1711 2N956 2N956 MOTOROLA 2n718a
Contextual Info: 2N718A 2N956 M A X IM U M R ATIN G S Rating Symbol 2N718A 2N956 2N1711 Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation a T ^ = 25°C Derate above 25°C PD Total Device Dissipation

2n1132

Contextual Info: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MPS9468

Abstract: MPS948 MPS9418 TO92A mps434 2n150
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE MPS6591 MPS8000 MPS9416 MPS9416A MPS9417 N N N N N MPS9417A MPS9418 MPS9434 MPS9466 MPS9466A H,'E VcEinft lc COMPLE­ C* fj mm mas MENTARY MHz (MHz) TYPE Pd Ic v CE0 (mW) (A)

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N2049

Abstract: 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N1613B 2N720A 2N721
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) 10 10 10 10 10 Cob COMPLE­ max MENTARY TYPE (PF) (A) fT min (MHz) 5 1.5 1.2 1.5 1.5 0.15 0.15 0.05 0.15 0.15 50 50 50 70 60 15 45 15