2N3700 Search Results

2N3019

Abstract: JAN2N3700 2N3019S 2N3019S JAN
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

TO206AA

Abstract: hFE-100 2N3700
Contextual Info: 2N3700 Silicon Transistors - NPN/PNP Medium Power General Purpose Page 1 of 1 Silicon Transistors - NPN/PNP Medium Power General Purpose Contact Factory for complete specification. STI Type 2N3700 VCBO 140 hFE 100 IC A 150m Industry Type 2N3700 Notes *BVCEO

2N3700

Abstract: 2N3701 transistor 45 f 122 test 2N3700
Contextual Info: DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS TA=25°C Collector-Base Voltage

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Da ta S h e e t No. 2 N 3 7 0 0 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3700 Type 2N3700 G eom etry 4500 P olarity NPN Q ual Level: J A N -J A N S

Contextual Info: 2N3700 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N3019 motorola

Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
Contextual Info: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage

2N3053

Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
Contextual Info: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous

2N3019

Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

2N3700UBJS

Contextual Info: 2N3700UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700UBJ • JANTX level (2N3700UBJX)

2N3019 and applications

Abstract: 2N3019S 2n3019 JANTX2N3700 jantx2n3019
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

*2N2920* LCC

Abstract: 2N2920* LCC 2N2222AUB 2N2907AUB 2N2906AUB
Contextual Info: SURFACE MOUNT CATALOGUE SURFACE MOUNT DEVICES CERAMIC LCC MIL-PRF-19500 QUALIFIED DEVICES SMALL SIGNAL - NPN * SMALL SIGNAL - PNP * 2N2221AUA 2N2222AUA 2N2221AUB 2N2222AUB 2N3700UB 2N2906AUB 2N2907AUB DUAL PACK TRANSISTORS* 2N2060U 2N4854U 2N5793U 2N5794U

5201/002/05R

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram

2N3700

Abstract: test 2N3700 JESD97
Contextual Info: 2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking

Contextual Info: 2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS 2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,

Contextual Info: M jC fg S & W atertow n, MA 02172 PH: 617 928-340 FAX: (€ 17) 924-1233 î lf 2N3700 F<»attires 140 Volts 1 Amp • Meets MIL-S-19500/301 • loliector-Base Vortage 140V • rast Switching 30 nS NPN - BIPOLAR TRANSISTOR (Maximum Ratings N£> r ! ; S'i VE'JL

Contextual Info: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability

Contextual Info: SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: 2N3700 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: 2N3700CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N3700CSM

Abstract: 2N3700 test 2N3700
Contextual Info: 2N3700CSM HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)

2N3700

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-040 FAX: (617) 924-1235 2N3700 Features 140 Volts 1 Amp • Meets MIL-S-19500/391 • Collector-Base Voltage 140V • Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage

2N3019 MOTOROLA

Abstract: 2N3019 2N3700 2N3020 motorola 2N3020 test 2N3700 2N3700 MOTOROLA 2N301 motorola 2N3019 2n3701
Contextual Info: Boca Semiconductor Corp. M A X IM U M R ATIN GS Symbol 2N3019 2N3020 2N3700 Unit C o lle ctor-E m itter V oltage VCEO 80 80 Vdc Collector-Base V oltage VCBO 140 140 Vdc Em itter-Base V oltage vebo 7.0 7.0 Vdc Rating C o lle ctor C u rrent — C o ntinuous