2N3053A Search Results

2N3053

Contextual Info: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:

RCA-2N3053

Abstract: 2N3053 rca 2N3053 1501 0647 2N3053A 17102 2n3053 RCA
Contextual Info: E SOLID STATE 3875081 Öl G E S O LID STATE » F | 3ä 7S 0ö]T0017101 0 | 01E 17101 D 'p -Z 'J -Z H ig h -S p e e d P o w e r T ra n s is to rs 2N3053, 2N3053A File Number 960 General-Purpose, Medium-Power

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications.

2S0571

Abstract: SK3265 2SC3419Y 2SC495 40409 silicon KT919G BFS22A BFS22 2n3053 motorola BLX65E
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 40389 2N3053 2N3053S 2N3053S 40392 40407 40407L 40407S 40544 40544L 40544S 40539 40539L 40539S 2N3053A 2N2949 40360 40360L :g~g~s 45 50 40361l 40361S 40408 40408l 40408S 40409 2S0571K 2S0571l

2N3053

Abstract: 2n3053 motorola motorola 2n3053 transistor motorola 2n3053 transistor 2n3053 2N3053 equivalent C2N3053 2N3053A
Contextual Info: MOTOROLA Order this document by 2N3053/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3053 2N3053A NPN Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS LIFETIME BUY Rating Symbol 2N3053 2N3053A Unit VCEO 40 60 Vdc Collector – Base Voltage

2N3053

Abstract: 2N3053 equivalent transistor 2n3053 2N3053 NPN transistor 2N3053, TO-39 PACK 2N3053A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N3053 VCEO 40 Collector -Emitter Voltage 1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage

2N3053 NPN transistor

Abstract: SILICON TRANSISTOR 2N3053 transistor 2n3053 2N3053 2N3053 transistor 2N3053A cev code
Contextual Info: Data Sheet 2N3053 2N3053A Cont nlll • «r ri NPN SILICON TRANSISTOR Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass Discrete Semiconductors DESCRIPTION

Contextual Info: 2N3053A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

2N3053 NPN transistor

Abstract: 2n3053 SILICON TRANSISTOR 2N3053 transistor 2n3053 2n3053 transistor 2N3053A NPN Transistor 2n3053 2N3053 NPN transistor hfe
Contextual Info: 2N3053 2N3053A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2n3053 motorola

Abstract: 2n3053 motorola 2n3053 N3053
Contextual Info: MAXIM UM RATINGS Symbol Rating 2N3053 2N3053A Unit Collector-Emitter Voltage 1 v CEO 40 60 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage vebo 5.0 Vdc Collector Current — Continuous fC 700 mAdc Total Device Dissipation @ To = 25 C Derate above 25°C

2N3053A

Abstract: A120
Contextual Info: 2N3053A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

Contextual Info: 2N3053A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

Contextual Info: 2N3053 2N3053A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE

transistor 2n3053

Abstract: pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 NPN transistor 2N3053 2N3053 equivalent 2N3053 transistor 2N3053A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage

Contextual Info: M AXIMUM RATINGS Symbol Rating 2N3053 2N3053A U n it C o lle c to r -E m itte r V o lta g e ll v CEO 40 60 Vdc C o lle c to r-B a s e V o lta g e VCBO 60 80 Vdc E m itte r-B a s e V o lta g e Vebo 5.0 V dc C o lle c to r C u rre n t — C o n tin u o u s

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage