BCY59C Search Results

bcy591x

Abstract: 2N6429A sot23 12p BCY590 2SC538A TBC337A BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

BC238

Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
Contextual Info: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301

Contextual Info: t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07 U.S.A. BCY59C NPN Silicon Transistor LOW NOISE AUDIO AMPLIFIER TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 378-8960 ABSOLUTE MAXIMUM RATINGS | Parameter Symbol VCES Collector-amitter Voltage (VaE » 0) VCEO

BCY59CSM

Contextual Info: BCY59CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

IC380

Contextual Info: BCY59C Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BCY59C

Contextual Info: BCY59C Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BCY58C

Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
Contextual Info: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C

bcy591x

Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

BCY59C

Abstract: V/BCY59C
Contextual Info: BCY59C Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

IRF5402

Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

bc238

Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P
Contextual Info: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L

2N4036 g1

Abstract: BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

bcy59b

Abstract: TRANSISTOR 533
Contextual Info: BCY59 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE, SMALL SIGNAL, NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

bcy58

Abstract: BFS98 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO FREQ UENCY A M P LIF IER S, D R IV E R S and O U TPU T ST A G E S , O SC IL L A T O R S, A N D G EN ERA L PU RP O SE

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

bc238

Contextual Info: SbE 3> • ^70570 0DG7DM7 3 3 1 ■ Z E T B SEMICONDUCTOR DICE zetex semiconductors NPN SM ALL SIGNAL TRA N SISTO R S V CBO V CE0 hFE at •CBO Dice type Min. Min. Max. at V CB Volts Volts BC 546A BC546B ZTX304 BCY65EA BC182 BC 107A BC107B BC237 BC 547A BC547B