BSX52A Search Results

BSX52A

Contextual Info: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

584 TRANSISTOR

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BSX52A • Hermetic TO-18 Metal package. • Designed For Low Frequency Amplifiers, and Low Current Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO

Contextual Info: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BCY651X

Abstract: 2N6540 SG-333 bsw43a SG333 2N5081 2N2097A BCY65EPDM SE4020 2N2094A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2SC3623K JE9153A 2SC3112A 2SC3295 2SD1582K JE9153B JE9153 JE9153C 2SC3112B MPS3725 ~~:i;525 15 20 25 30 TP4014 2SC3325 BSW42A BSX51A BSX51A BSX51A PN4014 2N4014 25C3393S BSW43A BSW43A BSX52A BSX52A

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BSX52A • Hermetic TO-18 Metal package. • Designed For Low Frequency Amplifiers, and Low Current Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO

Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. CASE BSX38 BSX51 BSX51A BSX51B BSX52 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 345 300 300 300 300 100 200 200 200 200 30 .25 50 60 25 100 75 50 75 180 BSX52A BSX52B BSY41 BSY72 BSY73 N N P N N TO-18 TO-18 TO-18

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BSW21A

Abstract: 2n2222 npn BSW22A BC107 BCY65E BC17 BC178 BSX51A BSX52A BCY58
Contextual Info: Small Signal M etal TO-18 METAL TRANSISTORS NPN TYPES G E N E R A L PURPOSE SW ITCH A N D A M P L IF IE R v CEO V C E R (+ ) (V q q ) I q max. (m A ) H pE min. @ NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 45 20 32 45 60 25 50 60 25 50 60 100 100 200 200

BSY73

Abstract: BSY89 BFY39 BSY41 BFX93 BFY76 BFY77 BSW19 BSW19A BSW20
Contextual Info: T YPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers Pd mW 'c Im A I V C EO (V ) FE V C E (S A T ) min max •c Im A I V CE (V ) 0.01 0.01 5 5 BFX93 BFX93 N N TO-18 TO-18 300 300 30 30 45 45 40 100 120 300 BFY39 BFY76 BFY77 N N N TO-18 TO-18

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

EN930

Abstract: BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 BCY86 BF394 BFW22
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY fl Cob N.F. IC VCE max IC min max max mA (V) (V) (mA) (MHz) (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max P P P P P TO-18 TO-18 TO-18 TO-18 TO-18 300 350 350 350

BCY85

Abstract: to92c KM9011 bf394 BSY78 BSX51A BSY73 BSY89 BCY70 BCY72
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE Pd RITY IC IC VCEO mW (mA) (V) min fl Cob N.F. IC min max max (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS max VCE max (mA) (V) (V) (mA) (MHz) BCY70 BCY71 BCY72 BCY78 BCY79 P P P P P TO-18 TO-18 TO-18

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

BFX93

Abstract: LN9014
Contextual Info: MICRO E L E C T R O N I C S LTD SIE D • bOTlTflfl 0 0 0 1 0 7 3 STb ■ NEHK Low Level and General Purpose Amplifiers TYPE NO. P O L A R IT Y T -2 7 -0 1 Pd m W ■c (m A ) V C EO (V I FE V C E (S A T ) min max 'c (m A ) V CE (V ) 0.01 0.01 5 5 BFX93