BSX38 Search Results

Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. CASE BSX38 BSX51 BSX51A BSX51B BSX52 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 345 300 300 300 300 100 200 200 200 200 30 .25 50 60 25 100 75 50 75 180 BSX52A BSX52B BSY41 BSY72 BSY73 N N P N N TO-18 TO-18 TO-18

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BSY73

Abstract: BSY89 BFY39 BSY41 BFX93 BFY76 BFY77 BSW19 BSW19A BSW20
Contextual Info: T YPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers Pd mW 'c Im A I V C EO (V ) FE V C E (S A T ) min max •c Im A I V CE (V ) 0.01 0.01 5 5 BFX93 BFX93 N N TO-18 TO-18 300 300 30 30 45 45 40 100 120 300 BFY39 BFY76 BFY77 N N N TO-18 TO-18

BSX38

Abstract: ic 4148 TRANSISTOR 4148
Contextual Info: Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schalter Applications: Switches Besondere Merkmale: Features: • Hohe Strom verstärkung • High current gain • In G ruppen so rtie rt • In groups selected

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

EN930

Abstract: BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 BCY86 BF394 BFW22
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY fl Cob N.F. IC VCE max IC min max max mA (V) (V) (mA) (MHz) (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max P P P P P TO-18 TO-18 TO-18 TO-18 TO-18 300 350 350 350

BCY85

Abstract: to92c KM9011 bf394 BSY78 BSX51A BSY73 BSY89 BCY70 BCY72
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE Pd RITY IC IC VCEO mW (mA) (V) min fl Cob N.F. IC min max max (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS max VCE max (mA) (V) (V) (mA) (MHz) BCY70 BCY71 BCY72 BCY78 BCY79 P P P P P TO-18 TO-18 TO-18

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

2SC372Y

Abstract: 2N5027 2SC372-Y 2SC1335 2SC1766C G50N50 NPN 2sc372 2N1410A 2N1410 2SC306
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

BFX93

Abstract: LN9014
Contextual Info: MICRO E L E C T R O N I C S LTD SIE D • bOTlTflfl 0 0 0 1 0 7 3 STb ■ NEHK Low Level and General Purpose Amplifiers TYPE NO. P O L A R IT Y T -2 7 -0 1 Pd m W ■c (m A ) V C EO (V I FE V C E (S A T ) min max 'c (m A ) V CE (V ) 0.01 0.01 5 5 BFX93