2SC1766C
Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133
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2sc1766a2sc1766b2sc1766c2sc1766d+15mm1941mps6512mps6513tp5377tp5376hse144bfy162sc1335diode 10n 40d2sc3062n21612n22102n1410a2n14102n2197 semelab
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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3tp4715tp47165tp4717tp4718+167tp4719tp47209tp4721tp4722tp4728tp4729tp5000tp5056tp4506tp5351tp5046tp4656tp4650tp4780tp5006tp5299
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2N5135
Contextual Info: AL L E G R O MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. Ì3 I • D S G M 3 3 0 0GD35fifl b ■ ALGR 93 D 0 3 5 8 8 S E M I C O N D S / ICS 3> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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0gd35fifltp5131tp5132tp5133+62n51352n5136tp51372n51722n5174tp5189
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765
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2N5219
Abstract: 2N5136
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 13 SPRAGUE. » • 0513050 GGQ3SÖÖ 7 ■ SEM ICONDS / IC S 93D 03588 3> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type TP5131 TP5132
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1fls13fisqo-226aa/style2n52192n5136 |
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C27-C36
Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
Contextual Info: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#
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page45page476870bec27-c36+9tp5000m1535 a1rs200mtp4506tp5056tp4721tp5860j5027tp4456
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2SC372Y
Abstract: 2N5027 2SC372-Y 2SC1335 2SC1766C G50N50 NPN 2sc372 2N1410A 2N1410 2SC306
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133
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2sc1766a2sc1766b2sc1766c2sc1766d+15mm1941mps6512mps6513tp5377tp5376hse1442sc372y2n50272sc372-y2sc1335g50n50npn 2sc3722n1410a2n14102sc306
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TP2222A
Abstract: ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221 TP2221A
Contextual Info: € # SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES TP TRANSISTORS • S m a ll -s ig n a l T O - 9 2 plastic transistors. Su g ge s te d replace m e n t s f o r 2 N series d e v i c e s a v a i l a b l e in T O - 5 , T O - 1 8 , T O - 3 9 ,
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o-105o-106orto-226abtp2221+9tp2222act 60 transistortp2222tp5816tp2906akd pnptp2907atp3061tp2221a
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