2N3397
Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
|
OCR Scan
|
2n27112n27122n27132n2714+82n29232n29242n29252n29262n33902n33912n3397n3860
|
PDF
|
n3860
Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
|
OCR Scan
|
2n27112n27122n27132n2714+82n29232n29242n29252n29262n33902n3391n38602n292
|
PDF
|
2N3643 TO-105
Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225
|
OCR Scan
|
dd00s102n27112n27122n2713+102n27142n29232n29242n29262n3392cbr122n3643 to-1052n35662n35692n3568 central
|
PDF
|
2N2713
Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
2n27112n27122n27132n2714+122n29232n29242n29252n29262n33902n33912n2926 equivalent2n2714 transistor2n34042n3391 equivalent2n3392 equivalentnpn/2n2714 transistor
|
PDF
|
2N9860
Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
2n27112n27122n27132n2714+132n29232n29242n29252n29262n33902n33912n98602n38692n38802n3856n3860transistor 2n32n3858
|
PDF
|
2N3877
Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
2n27112n27122n27132n2714+92n29232n29242n29252n29262n33902n33912n38772n3877ages6220
|
PDF
|
2n3391 complement
Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
Contextual Info: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA
|
OCR Scan
|
2n27112n27122n27132n2714+9150ma2n29232n29242n29252n531d2n53112n3391 complement2n33912n2926
|
PDF
|
NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
|
OCR Scan
|
2n27112n27122n29242n2925+142n29262n44012n44022n4403mps2713mps2714npn transistor 2n4400 beta valuetp4058npn transistor 2n 3904tp4059transistor ebc 3904tp40602n2712 to-92hstp3644
|
PDF
|
2N2925
Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
|
OCR Scan
|
2n27112n27122n27132n2714+82n29232n29242n29252n29262n33902n33912n3405n3860
|
PDF
|
TRANSISTOR 2n3901
Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
|
OCR Scan
|
2n27112n27122n27132n2714+92n29232n29242n29252n29262n33902n3391transistor 2n39012n390 pnp2n3901
|
PDF
|
2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3643
|
PDF
|
2N2924
Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
|
OCR Scan
|
2n27112n27122n27132n2714+112n29232n29242n29252n29262n33902n33912n38562n34042n3856a2n3405n3860
|
PDF
|
2N2711
Contextual Info: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B
|
OCR Scan
|
2n929a2n9302n930a2n2511+62n25862n26052n2711sn27122n27142n2716
|
PDF
|
PE255B
Abstract: BC150 CS9014 2N2244 LOW-POWER SILICON NPN 2N5137 ST700 2N2245 PE254 cs901
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2N2711 2N2713 SG104 2N3854 BSY73 2N2926 CS9017 CS9017 MPS9411 BSY81 ~~1~~31 15 20 PN5133 2N4252 2N5133 MPS9416 CS9014 2N3721 2N3855 2N5183 ~~g~~~ 25 30 2N2712 MPS2712 MPS2716 2N2714 BSY72 2N2716 40231 40234
|
Original
|
2n27112n2713sg1042n3854+15bsy732n2926cs9017mps9411bsy81pe255bbc150cs90142n2244low-power silicon npn2n5137st7002n2245pe254cs901
|
PDF
|
|
|
2N2712 advanced
Abstract: 2N2926 equivalent 2N3405 2N2924 equivalent 2N2925 equivalent 2N3404 2N3416 equivalent n3860 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
|
OCR Scan
|
2n27112n27122n27132n2714+142n29232n29242n29252n29262n33902n33912n2712 advanced2n2926 equivalent2n34052n2924 equivalent2n2925 equivalent2n34042n3416 equivalentn3860
|
PDF
|
n3860
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n3391n3860
|
PDF
|
beta transistor 2N2222
Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V
|
OCR Scan
|
2n27112n27122n27132n2714+15150ma2n29232n29242n29252n3976m23p-xs16beta transistor 2n22222n2924 equivalentbeta dc of transistor 2n22222n2925 equivalent1n9148beta transistor 2n27122n2905 2n22192n3390 equivalentbeta transistor 150
|
PDF
|
2N3643 TO-105
Abstract: 2N3566 2N3569 2N5129 2N3642 2N4140 2N4437 2N3643 2N4436 2N6136
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SW ITCHING A N D G EN ER A L PURPOSE VCB VCE V EB h FE at *C V V V min max mA 2N2711 2N2712 2N2713 2N 2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90
|
OCR Scan
|
qdd02102n27112n27122n2713+162n27142n29232n29242n29262n3392cbr302n3643 to-1052n35662n35692n51292n36422n41402n44372n36432n44362n6136
|
PDF
|
|
Contextual Info: 2N2711 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2n2711 |
PDF
|
2N3394
Abstract: 2N2925 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3390
Contextual Info: SILICON SIGNA L TRANSIST ORS G E N E R A L PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925
|
OCR Scan
|
2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3394
|
PDF
|
TP4058
Abstract: TP4059 D33021 2N2711 2N5249 TP3703 TP3704 2N2924 2N2925 2N3392
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
|
OCR Scan
|
2n27112n27122n29242n2925+122n2926tp3708tp3709tp3710tp3711tp4058tp4059d330212n5249tp3703tp37042n3392
|
PDF
|
T4 3570
Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
|
OCR Scan
|
2n27112n27122n27132n2714+132n29232n29242n29252n29262n33902n3391t4 3570transistor t4 3570transistor 2n27122n39002n26462n3405n3860
|
PDF
|
2n2926 transistor
Abstract: TRANSISTOR 2n3901 2N2926 NPN high power transistor beta transistor 150 2N3404 2N2711 2n3877 transistor 2N2714 2N2923
Contextual Info: SILICON S IG N A L TR A N S IS T O R S G E N E R A L PURPOSE A M PLIFIER S TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (SA T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924
|
OCR Scan
|
2n27112n27122n27132n2714+122n29232n29242n29252n29262n33902n33912n2926 transistortransistor 2n3901npn high power transistorbeta transistor 1502n34042n3877 transistor
|
PDF
|
2N4265
Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
Contextual Info: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924
|
OCR Scan
|
2n27112n27122n27132n2714+152n29232n29262n33952n33962n33972n33982n4265sprague electric2n58322n38592n2926-1660111sprague to922n3404 npn2n4062
|
PDF
|
