2N292 Search Results

Contextual Info: m 2N2920A \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 MAXIMUM RATINGS lc 30 mA V ce 60 V P diss 500 mW @ TA = 25 °C

n3860

Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394

2N2920ADCSM

Contextual Info: 2N2920ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

AN-31

Abstract: Op Amp Circuit Collection Reference Vishay Ultronix Grand Junction CO Q81 Q81, 1K, 3500 ppm "multiple aperture Window Discriminator" noise detector using instrumentation amplifier CO Q81 zero crossing detector in rectifier circuit Vishay Q81
Contextual Info: National Semiconductor Application Note 31 September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1—Basic Circuits Inverting Amplifier Non-Inverting Amplifier Op Amp Circuit Collection

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

soc2920ahrb

Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■

Contextual Info: 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2920 MECHANICAL DATA Dimensions in mm (inches) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE ' '^0.7110.021) tit 10.034) TO-77 PACKAGE PIN 1 - Collector 1

common emitter amplifier

Abstract: 2N2920DCSM 2N2920
Contextual Info: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)

2N2920

Abstract: 2N2929 2N2919
Contextual Info: TECHNICAL DATA 2N2919 JTX, JTXV 2N2919L JTX, JTXV 2N2920 JTX, JTXV 2N2920L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Symbol All Types Units Collector-Emitter Voltage 60 Vdc VCEO

Contextual Info: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)

2N2712

Abstract: 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397
Contextual Info: MPS/2N2923,4,5 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. CASE T0-92Á Their maximum power dissipation = 160mW at Ta=25°C. MPS TYPES

2N2919

Abstract: 2C2920KV CP2920 2N2920 MIL-PRF-19500L SEM 2006 G5241
Contextual Info: Data Sheet No. CP2920 2N2919 2N2920 Chip Type 2C2920KV Geometry 0307 Polarity NPN 18 MILS 18 MILS B E E 18 MILS B REF: MIL-PRF-19500L/355 18 MILS Chip type 2C2920KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance

2N2926

Abstract: 2n2926 transistor "to-98" package 2N226 100-C
Contextual Info: G E SOLI» STATE 3875081 G E SOLID STATE Öl DE 1 3075051 ODITTOT 3 j ~ 01E 17909 D - Signal Transistors 2N2£26 T~2,?~/ T Silicon Transistors TO-98 The G E/RCA 2N2926 is a planar passivated N PN Silicon tran­

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

Contextual Info: mi Vrrr= mi S E M E 2N2920DCSM LAB DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 .4 0 ± 0 .1 5 (0 .0 5 5 ± 0 .0 0 6) 2 .2 9 ± 0.20 (0 .09 ± 0 .008)

Contextual Info: 2N2920L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

Contextual Info: 2N2920+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N292A Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)20m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N2920L+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

2N3643 TO-105

Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225

Contextual Info: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON

Contextual Info: na. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N2927 PNP VHP AMPLIFIERS. HIGH CURRENT SWITCHES mechanical data ,- 1 COUICIOI '4S I !. tlMPt»ATU,I —=1—4. M,A, fO.NT | THE COUECTOK IS IN ELECTRICAL

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2N2713

Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘