2N2060
Abstract: 2N2721 2N2060 MOTOROLA
Contextual Info: MOTORCLA SC \ Ir * XSTRS/R F IZE O I b3b?2S4 00flb5fe,7 M i" J -. • m I ? 2N2721 CA S E 654-07, STYLE 1 M A X I M U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Vebo 6.0 Vdc
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2n27212n20602n2060 motorola |
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2N2919
Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920
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2n20602n22232n2223a2n2453+72n2453a2n2480a2n26392n26402n26412n26422n2919
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Transistor 78 L 05
Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920
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2n20602n22232n2223a2n2453+82n2453a2n2480a2n26392n26402n26412n2642transistor 78 l 052n2919
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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2N3810 LCC
Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *
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o-1162n3810 lcc206aa2n2920* lcc+32n3811 jantx2n37372n2907aub
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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Transistor 78 L 05
Abstract: 2N2919 130L 2N2903 2N2916
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5
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2n20602n22232n2223a2n2453+112n2453a2n2480a2n26392n26402n26412n2642transistor 78 l 052n2919130l2n29032n2916
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2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro
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29b52595f1352595f092n3800germanium+8diode germanium tu 38 e2n4051 motorola2n42802n39801n3492mc710f2n42762n3817
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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2N2648
Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974
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bc237-5bc237abc237a18bc237a5+16bcx70gbcx70rztx237bc167bc167abcx702n2648bc107bp2n2709delco2n26062n32472n2646 texas2n26242n26112n2601
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2SK847
Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247
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2sk696o-2472sk7192sk696a+13o-205ad/to-392n33742n33522sk8472n33052sk7342n2807a2n29702n29682n27092sk7332n29712sk794
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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IN733A
Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano
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2n5822n58282n5828a2n5829+162n58302n58312n58322n58332n60002n6004in733a2n551in768a2n1462n24052n3392n30722n2442n12342n1167
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
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integrau404lsu405lsu406ls841+15ls842ls421ls422ls423ls424npd5564npd5566bfy91imf39582n3050nf5458fairchild e212mp842j9100sst5638
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E421 fet
Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.
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o-72po-92xo-105o-106+11o-106pe421 fetequivalent transistor e176j2n2608j2n3821e112 jfete420 dual jfet2n390g transistore421 dual jfet2n4360 equivalent transistorsteledyne semiconductor jfet
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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e420 dual jfetac digital voltmeter using 7107mps5010bf320+6jfet bf245 bf246 j201 2n3819mc6821icl7117 voltmetercookbook for ic 555hall marking code a04e304 fet
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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