2N226 Search Results

AC122

Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~

Contextual Info: 2N2266 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC)125# I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)5.0

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

ASZ1017

Abstract: PTC155 MP1540 2N1532 2n2211 2N242 MP1542 MP280 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 - 10 20 25 30 MP1540 2N1540 MP1532 CDT1320 MP1537 2N297 2N297A CDT1311 ~~~~~~ COT1111A 40051 40421 40421 40421 MP1547 2N1547 2N1547A ~~~~r 35 40 MP1533 2N1531 2N463 2N1531A 2Nl182 2Nl159 2N3213 MP1538 ~~~~3~A

uPD70F3548

Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

germanium transistors NPN

Abstract: 2n1549 2N627 2N456A 2n1162 2N1560 germanium 2N458A 2n1291 2N1295
Contextual Info: germanium power transistors PNP TO-3 cont’d Type# = 3 to 25A Iife @ Ic / V c E NPN Comple­ VcEO(SUS) V ebo (Volts) (Volts) ment (Min-Max @ A/V) VcE(SAT) @ Ic/ I b Pd @ = 25°C Û JC (Watts) (°C/W) (V @ A/A) V be @ Ic/V cE (V @ A/V) (mA @ 1.5@5/1.5 1.5@5/1.5

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

2N1545

Abstract: 2N1546 2N457 2N1548 2N1137A 2N1168 2N1537A 2N1540 2N456A 2N2267
Contextual Info: 51 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN T Y PE N U M BER C ASE TYPE V CBO V I V CEO v e:b o V V 5 AMP G ERM A N IlJM PNP 2N1168 TO 3 2N1529 TO-3 2N1529A TO-3 50 40 40 2N1530 TO-3 2N1530A TO-3 2N1531 TO-3 V C ER V V C ES V hZE M IN. M AX. V CE

2N1543

Abstract: 2N1545 2n1547 2N1159 2N234A 2N235B 2N255A 2N256A 2N257 2N350
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type y kü y VCEO y y tao V ycc. y y„. y Min. CURRENT CA IN fai f VcE @ lç Max. V A s a t u r a t io n y y 1.50 y OL TAGES ¿e @ Ib A A &J-C ac / w 4 AMP GERMANIUM PNP 2N234A 2N235B 2N255A 2N256A 2N257 TO-3 TO-3

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK