2N350 Search Results

2N3507A

Abstract: 2N3507AJ 2N3507AJS 2N3507AJV 2N3507AJX
Contextual Info: 2N3507A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507AJ

Contextual Info: 2N3506A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3506AJ • JANTX level (2N3506AJX)

Contextual Info: 2N3507A Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corportion offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3507AJ • JANTX level (2N3507AJX)

Contextual Info: 2N3506L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3506LJ

Contextual Info: 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501LJ • JANTX level (2N3501LJX)

2N3500L

Abstract: 2N3501L
Contextual Info: Data Sheet No. 2N3501L Generic Part Number: 2N3500L Type 2N3501L Geometry 5620 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/366 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-5 case. •

1506

Abstract: 2N3507 2C3506 2N3506 2N3506L 2N3507L 22KA chip type geometry
Contextual Info: Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and

Contextual Info: 2N3506L Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3506LJ • JANTX level (2N3506LJX)

transistor 2N3504

Abstract: 2N3503 2N3504 2N3505 2N3502
Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

Contextual Info: 2N3501 MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • 150 Volts 500mAmps TO-39 Package Meets MIL-S-19500/366

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2N 3501 $ id L SEMICONDUCTORS Type 2N3501 G eneric Part Num ber: 2N3500 G eom etry 5620 Polarity NPN Qual Level: J A N -J A N S

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2 N 3 5 0 0 L $ id L SEM ICO N D U CTO RS G eneric Part Num ber: 2N3500 Type 2N3500L G eom etry 5620 Polarity NPN Qual Level: JAN - JA NTXV

2n3498

Contextual Info: 2N3498L thru 2N3501L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498L thru 2N3501L epitaxial planar transistors are military qualified up to a

2N3501

Abstract: 2N3501UB 2n3500
Contextual Info: JANS 2N3498 thru JANS 2N3501 RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 Qualified Levels: JANSM, JANSD, JANSP, JANSL and JANSR DESCRIPTION This family of JANS 2N3498 through JANS 2N3501 epitaxial, planar transistors are military

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

2N3501LJV

Abstract: 2N3501LJX 2N3501L 2N3501LJ 2N3501LJS
Contextual Info: 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501LJ • JANTX level (2N3501LJX)

2N3507

Abstract: 2N3507J 2N3507JS 2N3507JV 2N3507JX
Contextual Info: 2N3507 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507J • JANTX level (2N3507JX)

B0933

Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL

2N3507

Contextual Info: 2N3507 Chip: 5.0V; 3.0A; geometry 1506; polarity NPN 8.75 Transistors. 1 of 1 Home Part Number: 2N3507 Online Store 2N3507 Diodes C hip: 5 .0 V; 3 .0 A; geo m et ry 1 5 0 6 ; po larit y NPN Transistors

2n3503

Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

2N3509

Contextual Info: 2N3509CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: 2N3506 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3503

Abstract: 2N3505
Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S