2N1545
Abstract: 2N1546 2N457 2N1548 2N1137A 2N1168 2N1537A 2N1540 2N456A 2N2267
Contextual Info: 51 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN T Y PE N U M BER C ASE TYPE V CBO V I V CEO v e:b o V V 5 AMP G ERM A N IlJM PNP 2N1168 TO 3 2N1529 TO-3 2N1529A TO-3 50 40 40 2N1530 TO-3 2N1530A TO-3 2N1531 TO-3 V C ER V V C ES V hZE M IN. M AX. V CE
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2N2869
Abstract: 2N1168 2N375 2N380 2N2870 2N268A 2n1363 2N1359 2N2423 2N1365
Contextual Info: Sermanium power transistors 46 T 0 3 / See Pg. 147 for o u t lin ^ d r jjjig PNP ALLOY TRANSISTORS 1.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER 2N296 2N375 2N392 2N618 2N1168 2N1359 2N1360 2N1362 2N1363 2N1364 2N1365 2N2869/301 2N2870/301A @ V CB v,CE V EB — 60
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2N1543
Abstract: 2N1545 2n1547 2N1159 2N234A 2N235B 2N255A 2N256A 2N257 2N350
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type y kü y VCEO y y tao V ycc. y y„. y Min. CURRENT CA IN fai f VcE @ lç Max. V A s a t u r a t io n y y 1.50 y OL TAGES ¿e @ Ib A A &J-C ac / w 4 AMP GERMANIUM PNP 2N234A 2N235B 2N255A 2N256A 2N257 TO-3 TO-3
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2N1152
Abstract: 2N1149 2N1150 2N1151 2N1265 2N1193 2N1212 RCA 2n1184a 2N1247 2N1264
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507
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2n11522n11492n11502n1151+62n12652n11932n1212rca 2n1184a2n12472n1264
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241
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2N2222A mps
Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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2N1537A
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type y kü y VCEO y y tao V ycc. y y„. y Min. CURRENT CA IN fai f VcE @ Max. V A s a t u r a t io n y y 1.50 y OL TAGES ¿e @ Ib A A &J-C ac / w 4 AMP GERMANIUM PNP 2N234A 2N235B 2N255A 2N256A 2N257 TO-3 TO-3
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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SN72710L
Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4
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Bendix Transistors
Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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2N375
Abstract: 2N456A 2N1533 2N539A 2N1545 2n555 2N1543 2N669 2N25 2N176
Contextual Info: 49 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN type: N U M B ER C A SE TYPE V CBO V V CEO V V E BO V VCER V V C ES V M IN. hIFE | M AX. V CE V SA T U R A T IO r M V O L T A G E S ë> I 'c A V CE(s V BE(sl V | V 'c A 'b I A 2 AMP G ER VIANILIM PNP 2N250
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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AC127
Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub lication. The manuscripts may deal with any
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