2N250 Search Results

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N1011

Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136

2N2501

Contextual Info: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N1893 motorola

Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

TO93 package

Abstract: TO93 15101GOB 2n2505 to-83 TO-93 package TO94 2N2507 scr 2N2504 150C120BIL
Contextual Info: Silicon Controlled Rectifiers Part Number SCR 2N1804 2N4366 2N4376 70C100BIL 2N4367 2N4377 70C120BIL 08001 GOB 08002GOB 08004GOB 08006GOB 2N2503 15101GOB 2N2504 15102GOB 2N2505 2N2506 15104GOB 2N2507 2N2508 15106GOB 150C80BIL 150C100BIL 150C120BIL 175C60B

2N2501

Contextual Info: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

2n2500

Abstract: 2N2498 2n2497 2n2499
Contextual Info: TYPES 2N2497 THRU 2N2500 P CHANNEL SILICON JUNCTION FIELO-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 683519. M A Y 196 3 - R E V IS E D M AY 1968 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Guaranteed 10 cps Noise Figure 2N2500

2N2501

Contextual Info: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

Contextual Info: 40 81 34 693 SEMICOA DE | 0134^3 00 D01 3S M HIGH SPEE D LOGIC SW ITCHES C e n t’d Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW Electrical Characteristics @ 25°C

2N2875

Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N375

Abstract: 2N456A 2N1533 2N539A 2N1545 2n555 2N1543 2N669 2N25 2N176
Contextual Info: 49 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN type: N U M B ER C A SE TYPE V CBO V V CEO V V E BO V VCER V V C ES V M IN. hIFE | M AX. V CE V SA T U R A T IO r M V O L T A G E S ë> I 'c A V CE(s V BE(sl V | V 'c A 'b I A 2 AMP G ER VIANILIM PNP 2N250

2N3614

Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022

BSW65

Abstract: ST4341 2N2243AL BSW32 2N2364 LOW-POWER SILICON NPN 2N2891 BCX31 BSW39 2n738
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

JAN2N760A

Abstract: 2N3692 2n2510 2N3565
Contextual Info: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

2N1026

Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF