2N3614
Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022
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2n1137b2n11382n1138a2n1138b+162n250a2n251a2n4562n456a2n456b2n4572n36142n36182n5901germanium power devices2n36122n36162n36112n4582n58872n5900
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2N1011
Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136
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2n250a2n251a2n6372n637a+102n637b2n6382n638a2n638b2n10112n11362n11592n1537n1137germanium power
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2N1203
Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Contextual Info: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation
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2n1552n1562n1582n158a+142n173t0-132n1742n1762n234a2n1203pnp germanium to362n15452n2142n33122n36142n15602n15522n511
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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2N555
Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40
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42amp2n234a2n235b2n255a+152n256a2n2572n285a2n285b2n3992n4012n555germanium power2n5542n1762n5532n2422n257 drawing2n3072n250
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2N1545
Abstract: 2N1546 2N457 2N1548 2N1137A 2N1168 2N1537A 2N1540 2N456A 2N2267
Contextual Info: 51 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN T Y PE N U M BER C ASE TYPE V CBO V I V CEO v e:b o V V 5 AMP G ERM A N IlJM PNP 2N1168 TO 3 2N1529 TO-3 2N1529A TO-3 50 40 40 2N1530 TO-3 2N1530A TO-3 2N1531 TO-3 V C ER V V C ES V hZE M IN. M AX. V CE
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2N1152
Abstract: 2N1149 2N1150 2N1151 2N1265 2N1193 2N1212 RCA 2n1184a 2N1247 2N1264
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507
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2n11522n11492n11502n1151+62n12652n11932n1212rca 2n1184a2n12472n1264
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2n113
Abstract: 2N2146 N1137 2N1136B Germanium power 2N351A 2N2140A 2N1537 2N637 2N376A
Contextual Info: germanium power transistors 145 PNP ALLOY TRANSISTORS .5 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER Vel VeE VEl VeE Ie (A) Min. Max. Vel rnA 2N2138A 2N2139 2N2139A 2N2140 2N2140A 2N2141 2N2141A 2N2142 2N2142A 2N2143 2N2143A 2N2144 2N2144A 45 45A
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2n2138a2n21392n2139a2n2140+152n2140a2n21412n2141a2n21422n2142a2n21432n1132n2146n11372n1136bgermanium power2n351a2n15372n6372n376a
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2N3614
Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
Contextual Info: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation
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2n1552n1562n1582n158a+142n173t0-132n1742n1762n234a2n36142n4412n15532n15602n511b2n6692n5112n33121534a
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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ls 2027 audio ampecg transistor replacement guide book free2sb337transistor replacement guide+6980510s95102sb508c248507722n339bc149c
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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Bendix Transistors
Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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st3042st30433n1203n121+162n3322n3332n3352n3362n3342scl16bendix transistors2n1149rca 2n1184a2n11522n11512n1150rca 2n1174transitronemihus2n1193
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2N375
Abstract: 2N456A 2N1533 2N539A 2N1545 2n555 2N1543 2N669 2N25 2N176
Contextual Info: 49 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN type: N U M B ER C A SE TYPE V CBO V V CEO V V E BO V VCER V V C ES V M IN. hIFE | M AX. V CE V SA T U R A T IO r M V O L T A G E S ë> I 'c A V CE(s V BE(sl V | V 'c A 'b I A 2 AMP G ER VIANILIM PNP 2N250
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2n2502n25i2n2962n30i+152n30iamt-362n1552n1762n235a2n11682n3752n456a2n15332n539a2n15452n5552n15432n6692n25
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2N236A
Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
Contextual Info: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power
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2n1552n1562n1582n158a+152n173t0-132n1742n1762n234a2n236a2n4582n5542n21482n5112n4182n12032n36142n10212n214
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2N1227
Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Contextual Info: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation
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2n1552n1562n1582n158a+142n173t0-132n1742n1762n234a2n12272m2142n12021j632n21482ns402n5112n236a2n420
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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