2N401 Search Results

2N4012

Abstract: rca rf overlay transistor "MC 150" transistor MC 150 transistor rca rf transistor rca 2N4012 TI102 Frequency Tripler varactor transistor 2N4012
Contextual Info: File No. 90 RF P o w e r T ra n s is to r s Solid State Division 2N4012 H ig h -P o w e r S ilic o n N -P -N O v e rla y T ra n s is to r For Applications as a Frequency M ultiplier Into the U H F or L-Band Range Features • 2 .5 W ou tput w ith 4 dB conversion gain m in. as tripler to 1 G H z

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2N4014

Contextual Info: 2N4014 NPN Small Signal High Current High Speed Switch. 1.65 Transis. 1 of 2 Home Part Number: 2N4014 Online Store 2N4014 Diodes NPN Sm all Signal High C urrent High Speed Sw it c h. Transistors Enter code INTER3 at

2N4014

Abstract: ST 2N4014
Contextual Info: 2N4014 MAXIMUM RATINGS Sym bol 2N 4014 U n it C ollector-Em itter Voltage R atin g v CEO 40 Vdc C o llecto r-Base Voltage VCBO 80 Vdc Em itter-Base Voltage Ve b o 6.0 Vdc C o llector C urrent — Continuous — Peak 'C 1.0 2.0 Ade Total D evice Dissipation >i T a = 2 5 X

2N4014

Abstract: transistor 2N4014
Contextual Info: 2N4014 HIGH-VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT 300 MHz and tight

Contextual Info: r Z 7 * 7 # S G S - T H O M S O N R HiOraSOSDOS 2 N4013 HIGH-CURRENT SWITCH D E S C R IP T IO N The 2N4013 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-current switch used for memory applications requiring breakdown volt­ ages up to 30 V and operating currents to 1 A.

2N4014

Contextual Info: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C

2N555

Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40

2N4033

Abstract: 2N4125 NPN 2N4047 8VC80
Contextual Info: D i V1CÍ TYPE PACKAGE BVCEO 8V C 80 BVEBO C B O # V C B IV M M |V I M M IVI M M l» A | 1.7*A 1.7*A 50 50 50 2N4013 ÎN 4 0 I4 2N4036 2N4027 2N 40Î8 NPN NPN PNP PNP PNP T O -18 T O -18 T O - 18 T O -18 T O -18 30 50 60 80 60 50 80 60 80 60 6 6 5 5 5 2N4029

AD132

Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A

KH 4007

Abstract: 257975,BOSE BOSE NS2N 2N4006
Contextual Info: PREMIUM PERFORMANCE ULTRA LOWrec sat 2N4006 THRU 2N4011 SILICON EPITAXIAL JUNCTION PNP SWITCHING TRANSISTORS GEO M ETRY 292 • • • • rgc (atl 3 Ohms Typical L O W C ,b LOW L EA K A G E HIGH B V e b o ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS: Ta = 25°C (UNLESS OTHERWISE STATED)

Contextual Info: 2N4016 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)300m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 3GE P • 7^537 Q031SQ3 0 ■ 'T'-'ZS- 1 S C S -T H O M S O N ^ r a @ i p O T o ) 3D(gi 2 N 4014 S G S-THOMSON HIGH-VOLTAGE, HIGH CURRENT SWITCH DESC RIPTIO N The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current

BC548BP

Abstract: BC549BP PN4013 BC453C 2SC2859Y TBC548 PE254 BF127 BF253 BF121
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 BC848 BC848 2SC3940 TEC8013F JE9101B BC232M 2N5377 BF253-3 BC548P BC548PK ~g~:~~~ 15 20 BC548PS BC54SVI BC54SVIP BC549P TECS013G PE254B 2N5376 2SC3341 ¥~~~13H 25 30 PN4013 2N4013 BF253-4 JE9101C

2N4013

Abstract: transistor 2N4013
Contextual Info: 2N4013 HIGH-CURRENT SWITCH DESCRIPTION The 2N4013 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-current switch used for memory applications requiring breakdown voltages up to 30 V and operating currents to 1 A. TO-18 INTERNAL SCHEMATIC DIAGRAM

2N4007

Abstract: 2N4011 2N401 2N4006 2N400 N4010 2N4009
Contextual Info: TELEDYNE COMPONENTS . 5ûE D • r«-/7 flT17tiDE OQGt.S'iD b ■ PREMIUM PERFORMANCE U LTRA LOWrec sat 2N4006 THRU 2N4011 SILICON EPITAXIAL JUNCTION PNP SWITCHING TRANSISTORS G E O M E T R Y 292 »EC t*"*) 3 Ohms Typical LOW C^b LOW LEAKAGE H IG H B V ebo

TA1N

Abstract: 2n4014
Contextual Info: TYPES 2N4013, 2N4014 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 7 , M A R C H 1973 FAST, H IG H -V O LT A G E , H IG H -C U R R E N T CORE D R IV E R S • hpE Guaranteed from 10 mA to 1 A • Guaranteed Switching Times at 500 mA •

2N4013

Abstract: 2n4014 DE800 2N4013 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F L2E 0 | b3b72S4 Q 0 f lt 3f l ö S | r - w - i? 2N4013 2N4014 CASE 22-03, STYLE 1 TO-18 TO-2Q6AA M AXIM UM RA TIN G S Symbol Rating 2N4013 2N4014 Unit Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 50 80 Emitter-Base Voltage

2n4013

Contextual Info: 2N4013 SILICON NPN TRANSISTOR DESCRIPTION: The ASI 2N4013 is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS IC 1.0 A VCEO 30 V VCBO 50 V VEBO 6.0 V PDISS 1.4 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG

2N4033

Abstract: 2n4026
Contextual Info: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN