2N399 Search Results

2N3996

Abstract: 2N3997 2N3999 1000C 2N3998
Contextual Info: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2n3997

Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
Contextual Info: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N

2n5385

Abstract: 2N5384
Contextual Info: TYPES 2N5384, 2N5385 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C £ DESIGNED FOR COMPLEMENTARY USE WITH 2N3996 AND 2N3998 • 30 W at 100°C Case Temperature • Typ t on of 160 ns at 2 A I c

2N3994

Contextual Info: B8 9 -9 7 2N3994, 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage 25 V 25 V Continuous Forward Gate Current Continuous Device Power DIssipation

2N3997

Abstract: 2N3997J 2N3997JV 2N3997JX
Contextual Info: 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3997J

chip die npn transistor

Contextual Info: 2N3996 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3996J

Contextual Info: 2N3998 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3998J • JANTX level (2N3998JX)

TO111

Abstract: 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265 PG2266 PG2267
Contextual Info: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: 2N3993 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: <£e.tnl-ConfLuckoi ZPioduati, fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 2N3991 Silicon Controlled Rectifier Reverse Blocking Triode Thyristor MAXIMUM ALLOWABLE RATINGS TYPE 2N3<991

2N3997

Abstract: 2N3996 2n3996 equivalent transistor 1000C 2N3998 2N3999 2N3997 JAN to-111
Contextual Info: TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices 2N3996 Qualified Level 2N3997 2N3998 MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IB 80 100 8.0 0.5 5.0 10 1 2.0 30 -65 to +200 Vdc Vdc Vdc Adc Max.

Contextual Info: 2N3999 Chip: geometry 9201; polarity NPN 14.14 Transistors Transistor. 1 of 1 Home Part Number: 2N3999 Online Store 2N3999 Diodes C hip: geo m et ry 9 2 0 1 ; po larit y NPN Transistors Enter code INTER3 at

Contextual Info: 2N3996 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3996J • JANTX level (2N3996JX)

Contextual Info: 2N3999 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3999J • JANTX level (2N3999JX)

Contextual Info: 2N3999 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3999J

Contextual Info: 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3997J

2N3996

Abstract: 2n3997 L6228
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V,Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATU RES D ESCRIPTIO N • • • • • Unitrode power transistors provide a unique combination of low saturation

2n3993

Abstract: 2N399
Contextual Info: 2N3993 /2N3994 CALOGIC CORP 4ÔE D • 1044322 0 G Ü 0 2 CH T MCGC r « lo W ir v U lw O K P-Channel JFET General Purpose Amplifier/Switch * CORPORATION 2N3993/2N3994 v ' Z7Z5 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • Lowros(on)

Contextual Info: 2N3996+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3997+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3996+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N555

Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40