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    2N3997 Search Results

    2N3997 Datasheets (51)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3997
    Microsemi NPN POWER SWITCHING SILICON TRANSISTOR Original PDF 56.87KB 2
    2N3997
    API Electronics Short form transistor data Short Form PDF 216.5KB 2
    2N3997
    Diode Transistor NPN TO-111 / TO-59 Transistors Scan PDF 64.08KB 1
    2N3997
    Diode Transistor Transistor Short Form Data Scan PDF 64.09KB 1
    2N3997
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N3997
    General Transistor NPN Power Transistors Scan PDF 95.49KB 1
    2N3997
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 44.41KB 1
    2N3997
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 111.61KB 1
    2N3997
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 81.58KB 1
    2N3997
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.07KB 1
    2N3997
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 154.66KB 1
    2N3997
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 170.34KB 1
    2N3997
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 164.97KB 1
    2N3997
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.22KB 1
    2N3997
    Unknown Shortform Electronic Component Datasheets Short Form PDF 58.22KB 1
    2N3997
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.86KB 1
    2N3997
    Unknown Vintage Transistor Datasheets Scan PDF 55.75KB 1
    2N3997
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.48KB 1
    2N3997
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 32.59KB 1
    2N3997
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 32.59KB 1
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    2N3997 Price and Stock

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    Microchip Technology Inc 2N3997

    Transistor BJT NPN 80V 5A TO-111 - Bulk (Alt: 2N3997)
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    Onlinecomponents.com 2N3997
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    Microchip Technology Inc JAN2N3997

    Trans GP BJT NPN 80V 5A 3-Pin TO-111 - Bulk (Alt: JAN2N3997)
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    Master Electronics JAN2N3997
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    Microchip Technology Inc JANTX2N3997

    Transistor GP BJT NPN 80V 5A 4-Pin TO-111 - Bulk (Alt: JANTX2N3997)
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    Microchip Technology Inc JANTX2N3997 225 50 Weeks
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    Master Electronics JANTX2N3997
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    Microchip Technology Inc JANTXV2N3997

    Transistor GP BJT NPN 80V 5A 4-Pin TO-111 - Bulk (Alt: JANTXV2N3997)
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    Master Electronics JANTXV2N3997
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    API Delevan JANTXV2N3997

    Trans GP BJT NPN 80V 5A 4-Pin Metal Can
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    Bristol Electronics JANTXV2N3997 113
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    2N3997 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3996

    Abstract: 2N3997 2N3999 1000C 2N3998
    Contextual Info: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original
    2n39962n39972n39982n3999+2mil-prf-19500/3741000c PDF

    2n3997

    Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
    Contextual Info: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N


    OCR Scan
    2n39962n39972n39982n3999+4t0-11i2n399lin9012 transistortransistor 9012 ax PDF

    2N3997

    Abstract: 2N3997J 2N3997JV 2N3997JX
    Contextual Info: 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3997J


    Original
    2n3997mil-prf-195002n3997j2n3997jx+32n3997jvmil-std-750mil-prf-19500/374 PDF

    2N3907

    Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


    OCR Scan
    a1331d04372n38792n3907+62n39192n39622n39632n39642n39652n3996 PDF

    2N3997

    Abstract: 2N3996 2n3996 equivalent transistor 1000C 2N3998 2N3999 2N3997 JAN to-111
    Contextual Info: TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices 2N3996 Qualified Level 2N3997 2N3998 MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IB 80 100 8.0 0.5 5.0 10 1 2.0 30 -65 to +200 Vdc Vdc Vdc Adc Max.


    Original
    mil-prf-19500/3742n39962n39972n3998+42n39991000c2n3996 equivalent transistor2n3997 jan to-111 PDF

    2N3997

    Contextual Info: 12E I SOLI» STATE DEVICES INC | s 3 t t D l l OOOSOtl 7 | T - S 2 - C ? 2N3996 AND 2N3997 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 F A X 213-92Í-2396 CASE STYLE Z FEATURES


    OCR Scan
    2n39962n39972n49992n5001 PDF

    Contextual Info: 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3997J


    Original
    2n3997mil-prf-195002n3997j2n3997jx+32n3997jvmil-std-750mil-prf-19500/374 PDF

    2N3996

    Abstract: 2n3997 L6228
    Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V,Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATU RES D ESCRIPTIO N • • • • • Unitrode power transistors provide a unique combination of low saturation


    OCR Scan
    2n39962n39972n39982n3999+3mil-s-19500/374100mal6228 PDF

    Contextual Info: 2N3997+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2n3997freq40m PDF

    2N3996

    Abstract: 2N3999 N3998 2N3997 2N3998 UNITRODE TRANSISTORS JANTXV2N3999 2N3997 JAN to-111
    Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V, Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATURES D ESCRIPTION • • • • • U nitrode power tra n sistors provide a u niq u e co m b in ation of low saturation


    OCR Scan
    2n39962n39972n39982n3999+6mil-s-19500/374100man3998unitrode transistorsjantxv2n39992n3997 jan to-111 PDF

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


    Original
    2n26572n26582n28772n2878+132n28792n28802n28902n28912n37442n3745sdt85502sdt849a/to1112n5002sdt3403sdt6314bu208 PDF

    2N3997SMD05

    Contextual Info: 2N3997SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


    Original
    2n3997smd05o276aa15-aug-02 PDF

    2N3997SMD

    Contextual Info: 2N3997SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


    Original
    2n3997smdo276ab15-aug-02 PDF

    Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original
    fl4m03ss0ddd1052n38502n3851+62n38522n38532n38782n38792n39282n3929 PDF

    Contextual Info: 2N3997+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2n3997freq40mreq40m PDF

    2N3997 JAN to-111

    Abstract: 2N4116 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929
    Contextual Info: MJæ J E LE C T R O N IC S , INC. [ - t i COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998


    OCR Scan
    2n3751o-111/12n37522n3850+8o-1112n38512n38522n38532n3997 jan to-1112n41162n39282n3929 PDF

    SPHV402

    Abstract: 2N3853
    Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original
    fl4m03ss0ddd1052n38502n3851+72n38522n38532n38782n38792n39282n3929sphv402 PDF

    TO111

    Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
    Contextual Info: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000


    Original
    2n38502n38512n38522n3853+102n38782n38792n39282n39292n39962n3997to1112n432n4231to-111 PDF

    Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original
    fl4m03ss0ddd1052n38502n3851+62n38522n38532n38782n38792n39282n3929 PDF

    TIP-561

    Abstract: TIP512 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP511 TIP-555
    Contextual Info: i Metal Can Power Case Outlines High Reliability P ro fe ssio n i Types continued Device Type ' Polarity Outline Continuous Ic A TIP554 TIP555 TIP556 2N5938 TIP509 TIP511 TIP610 T1P512 2N4913 2N4914 TIP620 TIP625 2N2880 2N5385 2N3996 2N3997 2N3998 2N3999


    OCR Scan
    tc-25-ctc-100tip554tip555+14tip6562n5938tip609tip511tip5122n4913tip-561tip561tip558n538tip55tip622tip5tip-555 PDF

    2N4033

    Abstract: 2n4026
    Contextual Info: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028


    OCR Scan
    fll331fl72n39972n39982n3999+72n40002n40012n40122n40262n40272n40282n4033 PDF

    2N5415

    Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan
    o-111o-5/39o-1142n5415 PDF

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


    OCR Scan
    0-20a0-100v2n50062n5008+112n52882n52b92n52852n534e2n53472n53482n53172n53192n57312n5957walta PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF