WALTA Search Results

Contextual Info: Table V9 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@5A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A) (A)

Contextual Info: Table V4 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC (VRMS) DC (V) Maximum Clamping Voltage V@5A (V) Maximum Surge Current (8x20µs) 1 Time (A) 2 Times (A) Rated Energy Waltage (10x1000µs)

Contextual Info: Table V12 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@50A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A)

Contextual Info: Table V7 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC (VRMS) DC (V) Maximum Clamping Voltage V@50A (V) Maximum Surge Current (8x20µs) 1 Time (A) 2 Times (A) Rated Energy Waltage (10x1000µs)

Contextual Info: Table V8 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@10A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A) (A)

Contextual Info: Table V6 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@25A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A) (A)

Contextual Info: Table V13 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@100A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A)

Contextual Info: Table V5 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance ROV07-180M 18 ± 20% Maximum Allowance Voltage Maximum Clamping Voltage AC (VRMS) DC (V) V@10A (V) 11 14 36* Maximum Surge Current (8x20µs) Rated Energy Waltage (10x1000µs)

Contextual Info: Table V14 - Rating and Characteristics—14mm Devices Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@50A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time

Contextual Info: Table V11 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@25A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A)

Contextual Info: Table V10 - Rating and Characteristics Varistor Voltage V@1.0mA Part Number DC V Tolerance Maximum Allowance Voltage AC DC (VRMS) (V) Maximum Clamping Voltage V@10A (V) Maximum Surge Current Rated Energy (8x20µs) Waltage (10x1000µs) 1 Time 2 Times (A)

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

ITE 8721

Abstract: fnd 503 7-segment TAA 2761 A 486 motherboard schematic 3860S 486dx isa bios pin assignment RAS 0510 cxd 9897 tn ti77 k244
Contextual Info: ISA/486 C H |p g . CepyTlgtt N ette S o t t r a e C o p y ñ f tt O 1962, a * « * d T e d » a i e s i e * . l w x M t o n i I C o p y r i i h t O 1992 . Q ñ p » » d T c c t n o f a p B » , ! ^ . A B SIduR am i Poned ib UJ5A. Tw dw u U t h w lw lgim iil

Am2903A

Abstract: AM2925 AM2925A CD3024 H-17 programmable pipeline microcode memory AM27S27 AM2910A
Contextual Info: Am2925A Advanced Micro Devices Clock Generator and Microcycle Length Controller DISTINCTIVE CHARACTERISTICS Crystal controlled oscillator - Stable operation from 1-50 MHz TTL controlled oscillator - Stable operation from 1-60 MHz Four microcode controlled clock outputs

MOSFET 3N 200

Abstract: IRLR mosfet
Contextual Info: IRLR/U230A A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 200 V 0.4Î2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 7.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V

G24q

Contextual Info: IRFW/I610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ Vos = 200V

SFM9120

Abstract: N -Channel power Sot 6
Contextual Info: SFM9120 Advanced Power MOSFET FEATURES B V dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -1.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10

LM358 CONNECTION THE INPUT OF THE IC

Abstract: IC LM358M lm358 application note LM358M LM358NB operational amplifier LM358 LM358 LM358 circuit DIAGRAM LM358N-B
Contextual Info: LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Raytheon Low Power Dual Operational Amplifier LM358 Features Description • Intern ally fre q u e n cy com pensated fo r un ity gain ■ Large DC voltage gain — 100dB ■ W ide ba n d w id th un ity gain, tem pe rature co m ­

3TF6

Abstract: 5611A B siemens softstarter wiring diagram 3RW40 3RP15 05-1AP30 1KB4
Contextual Info: SIRIUS Datasheet 2009 Low Voltage Controls & Distribution Answers for industry. s Pressing, equipping, transporting. These functions run in many automated production environments. You’ll find everything that you need to switch, protect and start motors with the extensive portfolio of the modular SIRIUS system.

diode SY 192

Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
Contextual Info: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«

IRLR230

Abstract: nrf d
Contextual Info: IRLR230 A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 200 V 0.4Î2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 7.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V

LASCR

Abstract: 7493 mod 12 counter diagram hy534256s hy534256 IRP02 7493 counter as mod 12 counter
Contextual Info: H Y 5 3 4 2 5 6 »HYUNDAI S e r ie s 256KX 4-bit CMOS ORAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

x-ray inverter

Abstract: apc inverter circuit diode IO 35L avo 7145 samsung tv 37 ti aih 10 35L V6 v6425
Contextual Info: KA2153 LINEAR INTEGRATED CIRCUIT VIDEO-CHROMA DEFLECTION SYSTEM FOR A COLOR TV NTSC 42 DIP The KA2153 combines the video-chroma sub-system and the deflection combination on a single monolithic Integrated circuit to provide a color television video-chroma deflection system.

sr200

Contextual Info: HIGH POWER/HIGH VOLTAGE 2W to 250 WATT THICK FILM RESISTORS SR SERIES FEATURES Industry’s highest power film resistors! • ■ ■ ■ ■ ■ ■ R C D ’s S R S eries is designed for high voltage a n d/o r high pow er applications. Film construction has extrem ely low