T2929 Search Results

Contextual Info: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code

it8511te

Abstract: C929B Asus VARISTOR thm MW772 ICS954310cglf d4105 U2401 IT851 ISL6262CRZ
Contextual Info: 5 4 3 2 1 TERESA Block Diagram FAN + SENSOR ADM1032ARMZ PAGE 4 CLOCK GEN ICS954310 CPU D D T2060 4xx,5xx Series PAGE 5 DISCHARGER CIRCUIT PAGE 2,3 PAGE 37 FSB 533MHz Power On Sequence PAGE 40 DC/BATT IN GMCH-M Calistoga 943GML B0:02G010009121 LVDS & INV PAGE 12

2929 transistor

Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
Contextual Info: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

2929 transistor

Abstract: MMBT6427 MMBTA14 SOT-23 J
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage

MMBTA63

Abstract: ui35 WO-300 TRANSISTOR 13-h 2929 transistor
Contextual Info: S A M S U N G SEMICO NDU CTO R INC 14E O 1 7 ^ 4 1 4 2 OOGPiTö *1 | T -z f-ïf MMBTA63_ PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS

Contextual Info: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D | 7^4142 0007300 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 3EE D • û23b32Q Q Q lb b b b NPN Silicon Darlington Transistors _SIEMENS/ S P C L i • • • • 0 « SIP BCV 27 SEMICONDS _ BCV 47 For general A F applications High collector current High current gain Complementary types: B C V 26, B C V 46 PNP

Motorola MPSU95

Abstract: MPSU95 MPS-U95 SILICON SMALL-SIGNAL DICE motorola dice
Contextual Info: MOTOROLA 6367255 SC í DIODES/OPTOIT MOTOROLA SC "34 PF]Jb3b7ESS DIO DES/O PTO 34 C OUJüUJ,d 38013 D T-29-29 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) MPSAC66 - d ie n o . LINE SOURCE — DMB159 $ PNP This die provides performance similar to that of the following device types:

Contextual Info: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk

Contextual Info: SAMSUNG SEMICONDUCTOR I NC 14E | 7*11,4142 0007^^6 «1 | T - t f - * ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7*11.4:1.42 O O O T a T l b | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 1 DARLINGTON AMPLIFIER TRANSISTOR :- SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type

transistor sot-23 marking L8

Abstract: MMBT6427 H1030
Contextual Info: SAMSUNG S EMICONDUCTOR INC MMBT6427 146 D | 7^4142 □□□7284 *1 | -fizf- NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MPSA10

Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14
Contextual Info: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 | 7«lb4iq2 00073Mb S | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Darlington transistor T7 27

Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O | NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)

Contextual Info: SAMSUNG SPMICONDUCTOR INC 14E S MPSA62 D | 7^4115 00073b? 3 J PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: V ces=20V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic