TRANSISTOR K 620 Search Results

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C

BLV194

Contextual Info: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

SST222A

Abstract: MMST2222A PN2222A SST6838 SST6839 T116
Contextual Info: Transistors SST6838 NPN General Purpose Transistor SST6838 • E x t e r n a l d im e n s io n s U n its : m m • F e a tu re s 1 ) BVceo minimum is 40V (lc = 1 m A ) 2 ) Complements the SST6839. SST6838 ,1.9±0.2 10.950.95 • P a c k ag e , m a rk in g , and p a c k a g in g s p e c ific a tio n s

Contextual Info: m 2N6213 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6213 is Designed for General Purpose High Voltage Amplifier and Switching Applications. MAXIMUM RATINGS lc INCHES A 6 C D E F G H J K L M -350 V ce 35 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C

Contextual Info: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television

TRANSISTOR T0220

Abstract: 2SD1646 100v 1a darlington transistor 100 amp npn darlington power transistors
Contextual Info: h 7 > yX $ /I ransistors 2S D 1646 2SD1646 I t 0^ ^ ' > T ^ 7 ° U - ^ N P N Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • 1 x l'jÉ lIj/D im e n s io n s Unit : mm) U > h > i i ^ c T ' h FE 2} 5 ? > / ' $ - $ ' ( * - K rtM o • Features

2N6211

Abstract: te 2443
Contextual Info: 2N6211 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. 2.0 A VcB 275 V 225 V o m Ic V MAXIMUM RATINGS PACKAGE STYLE TO- 66 INCHES A B C D £ f G H J K L M 35 W @ Te # 25 0C P d is s Tj

Contextual Info: m 2N6211 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS V PACKAGE STYLE T O - 66 2.0 A lc 275 V cb IN C H E S A 6 C D E F G H J K L M O m < 225 V 35 W @ Tc = 25 °C

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.

TC-6201

Abstract: 2SK787 T460 L083S1213T AMC1085-3.3T
Contextual Info: MOS M O S Field Effect Pow er Transistor — MOS F E T x > r " s * > 7 ' m x i f f l 2 S K 787 Ü , + M O S F E T T* ^ > ÎS fiï*s'fS < , X -1* •/ -f- > ¥ i ì : mm & f) , rgjloJiSX 'f >yf <t> 3.2 + 0.2 4.7 MAX. 15.7 MAX. y o rn ili, m 1. 5 3 D c -D c

uln20658

Abstract: 2065B 2064B 2065 TI ULN20648 TD62064AP ULN2064 ULN-2064B ULN2065B ULN-2065B
Contextual Info: Quad Darlington Transistor A rra y ULN 2064B&#39; - 61 - - U LN 2 0 6 5 B , TD 6 2 0 6 4 A P js a ft & 1j [È] MIN T" — 9 T Y P MAX m fit 2064B 35 V 2065B 50 V tt £ n V f K FC I f = 1 .0 A 1.75 V NS I f —1.5A 2 .0 V MOT g,;g tpd «F Pd U LN 2064 TI V rik)

2SB1318

Abstract: BH rn transistor 3Fp transistor
Contextual Info: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh

acs sot-343

Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14538B Dual Precision Retriggerable/Resettable L SUFFIX CERAMIC CASE 620 Monostable Multivibrator The MC14538B is a dual, retriggerable, resettable monostable multivibrator. It may be triggered from either edge of an input pulse, and produces an

C02S

Abstract: Co750
Contextual Info: SIEMENS FEATURES SFH 620 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPÜT Package Dimensions in Inches mm * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 45% typical (>13) * Low CTR Degradation . 307 (7 8>_ .291 (7 4) .255 (6 5 )_ '2 4 8 ( 6 .3 ) * Good CTR Linearity Depending on Forward

Music Generator IC

Abstract: rhythm ic SVM7570M 15-melody sound ic SVM7571C vr1 500 2SA683 2SC1383 SVM7570C
Contextual Info: PF386-05 SVM7570C/M Series Music Generator IC ge lta o n V w tio Lo pera cts O rodu P 4 Sound Sources 620 Words Melody ROM Max. of 15 Melody DESCRIPTION SVM7570C/M Series CMOS high quality Melody IC's are able to play 3 different-tone-quality sounds and also

SFH6112

Abstract: Siemens optocoupler sfh610 SFH610 Siemens optocoupler sfh610A SFH611A-4 SFH6186T-3 Siemens sfh615 optocoupler SFH611-3 SFH611A-3 sfh610 equivalent
Contextual Info: SFH6106T SFH6116T SFH6156T SFH6186T SFH6206T SFH6286T SIEM EN S 5883 5.3 kV TRIOS HIGH RELIABILITY OPTOCOUPLERS FEATURES • SMD Versions of SFH610, 611,615,618, 620,628 • Available on Tape and Reel Suffix T • TRIOS — tansparent lOn Shield Package Dimensions in Inches (mm)

Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.