MPSA63 Search Results

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

Contextual Info: MCC TM Micro Commercial Components MPSA63 MPSA64
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features PNP Darlington Transistor x Capable of 1.5Watts of Power Dissipation x Collector Current –500mA

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPSA66

Abstract: MPSA63 MPSA62 MPSA64 MPSA65
Contextual Info: Data Sheet MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 Central Sem iconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 PNP SILICON DARLINGTON TRANSISTORS JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors

MPSA63

Abstract: MPSA05 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64* PNP Silicon COLLECTOR 3 MPSA55, MPSA56 For Specifications, See MPSA05, MPSAÓ6 Data “ Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol Rating MPSA62 MPSA63 MPSA64

Transistor BO 63

Abstract: MPSA63 transistor t0 92
Contextual Info: ; % : î- t - - ' t ÄT m in . f e II dlppf IPs Él¡ IIP^II. "'' "ï-*h. m mm&u :^S^fÊÈk % £äg?£*->. US ligi ipe, MPSA63 Jáfe PNP SILICON . DARLINGTON TRANSISTOR TO-92 MPSA63 is PNP s ilic o n d arlington tra n s is to r designed fo r p ream p lifier input a p p lica tio n s.

MPSA13

Abstract: MPSA14 MPSA63 MPSA64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA63; MPSA64 PNP Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification PNP Darlington transistors

MPSA63

Abstract: MPSA64G MPSA63G MPSA63RLRAG MPSA64 MPSA64RLRAG MPSA64RLRMG mpsa62
Contextual Info: MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features http://onsemi.com • These are Pb-Free Devices* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES -30 Vdc Collector-Base Voltage

Contextual Info: MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features http://onsemi.com • These are Pb-Free Devices* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES -30 Vdc Collector-Base Voltage

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

MPSA63

Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA64
Contextual Info: ON Semiconductort MPSA62 MPSA63 MPSA64 * Darlington Transistors PNP Silicon MAXIMUM RATINGS MPSA55, MPSA56 Symbol MPSA62 MPSA63 MPSA64 Unit Collector–Emitter Voltage VCES –20 –30 Vdc Collector–Base Voltage VCBO –20 –30 Vdc Emitter–Base Voltage

MPSA63

Abstract: MPSA63G MPSA63RLRAG MPSA64 MPSA64G MPSA64RLRAG MPSA64RLRMG
Contextual Info: MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features • These are Pb-Free Devices* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES -30 Vdc Collector-Base Voltage VCBO -30 Vdc

Contextual Info: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K

MPSA63

Abstract: MPSA62 MPSA63G MPSA63RLRA MPSA63RLRAG MPSA63RLRM MPSA64
Contextual Info: MPSA62, MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCES MPSA62 MPSA63/64

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors FEATURES MPSA63; MPSA64 PINNING • Low current max. £00 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gam (min. 10000). 2 base 3 emitter APPLICATIONS

Contextual Info: PNP Transistors * / % D isc re te P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor" P N P D arlin g to n T ra n s is to rs V CBO vV CES v EBO *CBO Case Style MPSA63 TO-92 92 30 0.1 30 MPSA64 TO-92 (92) 30 0.1 MPSA65 TO-92 (92) 30 0.1 (V)

MPS62

Abstract: MPS63
Contextual Info: TOSHIBA MPS62 MPS63,64 Discrete Semiconductors Transistor Silicon PNP Epitaxial Type Designed For Pre-Amplifier Input Application F e a tu re s • High DC Current Gain @ lc = 10mA - hFE = 5000 Min. MPSA63 10000 (Min.) MPSA64 20000 (Min.) MPSA62 • Collector-Emitter Breakdown Voltage

SA62

Abstract: MPSA63 equivalent MPS62
Contextual Info: TOSHIBA MPSA62,63,64 Transistor Unit in mm Silicon PNP Epitaxial Type M AX. Designed For Pre-Amplifier Input Application Features • High DC Current Gain @ lc = 10mA - hFE = 5000 Min. MPSA63 10000 (Min.) MPSA64 20000 (Min.) MPSA62 • Collector-Emitter Breakdown Voltage

mpsa63

Abstract: mpsa64
Contextual Info: ON Semiconductort MPSA62 MPSA63 MPSA64 Darlington Transistors PNP Silicon MAXIMUM RATINGS MPSA64 is a Preferred Device Symbol MPSA62 MPSA63 MPSA64 Collector −Emitter Voltage VCES −20 −30 Vdc Collector −Base Voltage VCBO −20 −30 Vdc Emitter −Base Voltage

MPSA63

Abstract: MPSA64
Contextual Info: I • N AUER PHILIPS/DISCRETE b'îE D ■ , ^ 5 3 ^ 3 1 GDEÖDEl T7M BiAPX I MPSA63 I MPSA64 P-N-P DARLINGTON TRANSISTORS P-N-P d a rlin g to n transistors in a plastic TO -92 envelope fo r general purpose applications. Q U IC K R E F E R E N C E D A T A M PSA64

MPSA63

Contextual Info: MCC MPSA63 MPSA64
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • PNP Darlington Transistor Capable of 1.5Watts of Power Dissipation Collector Current –500mA Operating Junction Temperature Range: -55℃ to +150℃

Contextual Info: MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.