PZTA63 Search Results

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

Contextual Info: bb53T31 DDEbOEB ‘IbE « A P X PZTA63 PZTA64 b7E D N AUER PHILIPS/DISCRETE J V SMALL-SIGNAL DARLINGTON TRANSISTORS PNP small-signal Darlington transistors in a microminiature SMD envelope SOT-223 . Designed primarily fo r preamplifier input applications requiring high input impedance.

PZTA64

Abstract: VPS05163 PZTA13 PZTA14 PZTA63
Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Type Marking Pin Configuration PZTA13 PZTA 13 1=B 2=C 3=E 4=C SOT223 PZTA14 PZTA 14

MPSA63

Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

PZTA63

Abstract: PZTA64
Contextual Info: • bbSBTBl DD2b023 TbE H A P X N AMER PH ILIPS/DISCRETE PZTA63 PZTA64 L7E » SM ALL-SIG NAL DARLINGTON TRANSISTORS PIMP small-signal D a rlin g to n transistors in a m icro m in ia tu re SM D envelope SO T-223 . Designed p rim a rily f o r p re a m p lifie r in p u t applications requiring high in p u t impedance.

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted

Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA13 PZTA 13 1=B 2=C 3=E 4=C

1713 Siemens

Abstract: Siemens 1713
Contextual Info: SIEMENS NPN Silicon Darlington Transistors • • • • PZTA 13 PZTA 14 For general AF applications High collector current High current gain Complementary types: PZTA63 PZTA 64 PNP Type Marking Ordering Code (tape and reel) Pin Coni igura ion 1 2 3 4

SOT-23 EBC

Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

TRANSISTOR A63

Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Contextual Info: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

PZTA14

Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Type Marking Pin Configuration PZTA13 PZTA 13 1=B 2=C 3=E 4=C SOT223 PZTA14 PZTA 14

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • PZTA 63 PZTA 64 For general AF applications High collector current High current gain Complementary types: PZTA 13, PZTA 14 NPN Type Marking Ordering Code (tape and reel) Pin Conf igural ion 1 2 3

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

PXTA14

Abstract: PMBTA64 BST60 PMBTA14
Contextual Info: N AflER PHILIPS/DISCRETE 5SE ]> • T-27~{?| bbS3T31 QQlt,E3T S ■ Surface Mount Devices DARLINGTON TRANSISTORS RATINGS TYPE PACKAGE hFE n V cE sat VCEO V VcB O V ic mA m inim ax. a t Iq /V c E mA/V V max. a tlc /le mA/mA typ MHZ PINOUT SEE SECTION VI N PN

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

Contextual Info: S M ALL-SIGNAL DARLINGTON TRANSISTORS PNP small-signal Darlington transistors in a m icrominiature SMD envelope SOT-223 . Designed prim arily fo r pream plifier input applications requiring high input impedance. NPN complement is the PZTA13/14. Q UICK REFERENCE D A T A

P1M marking code sot 223

Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Contextual Info: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions