MMBTA63 Search Results

Contextual Info: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

Contextual Info: MMBTA63 MMBTA64 COLLECTOR Darlington Transistor PNP Silicon 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCES VCBO VEBO IC Value -30

MMBTA63

Abstract: MMBTA64
Contextual Info: SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E B MAXIMUM RATING Ta=25ᴱ RATING UNIT VCBO -30 V MMBTA63/64 Voltage H SYMBOL 3 G A 2 CHARACTERISTIC Collector-Base L 1 Collector Current

MMBTA63

Abstract: ui35 WO-300 TRANSISTOR 13-h 2929 transistor
Contextual Info: S A M S U N G SEMICO NDU CTO R INC 14E O 1 7 ^ 4 1 4 2 OOGPiTö *1 | T -z f-ïf MMBTA63_ PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBTA13

Abstract: MMBTA14 MMBTA63 MMBTA64
Contextual Info: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 / MMBTA14 Ideal for Medium Power Amplification and Switching High Current Gain

MMBTA64-7-F

Abstract: J-STD-020D MMBTA13 MMBTA63 MMBTA64
Contextual Info: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 /MMBTA14 Ideal for Low Power Amplification and Switching

Contextual Info: MCC TM Micro Commercial Components MMBTA63 MMBTA64
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features This device is designed for applications requiring extremely high current gain at 500mA.

J-STD-020D

Abstract: MMBTA13 MMBTA14 MMBTA63
Contextual Info: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 /MMBTA64 Ideal for Medium Power Amplification and Switching

BTA64

Abstract: BTA63
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MMBTA63LT1 MMBTA64LT1* PNP Silicon COLLECTOR 3 'Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Rating Sym bol Value Unit VCES -3 0 Vdc C o lle c to r-B a s e Voltage VCBO -3 0 Vdc E m itte r-B a se Voltage

MMBTA63

Abstract: MMBTA63LT1 MMBTA64 MMBTA64LT1
Contextual Info: MOTOROLA Order this document by MMBTA63LT1/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors PNP Silicon MMBTA63LT1 MMBTA64LT1* COLLECTOR 3 *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

MMBTA13

Abstract: MMBTA14 SOT23 .K2D transistor marking code SOT-23 SOT-23 transistor code PB marking pc sot-23 transistor switching sot-23
Contextual Info: BL Galaxy Electrical Production specification NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBTA13/MMBTA14 Pb Lead-free MMBTA63/MMBTA64 . z High current gain. APPLICATIONS z Ideal for medium power amplification and switching

Contextual Info: MMBTA63 I MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Types Available M M B TA 13 / M M BTA14 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 •

MMBTA63

Abstract: MMBTA63LT1 MMBTA64 MMBTA64LT1
Contextual Info: ON Semiconductort Darlington Transistors MMBTA63LT1 MMBTA64LT1* PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc Emitter–Base Voltage

Contextual Info: SPICE MODEL: MMBTA63 MMBTA64 Pb MMBTA63 / MMBTA64 Lead-free PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 /MMBTA14 SOT-23 A Dim Min Max A 0.37 0.51 B 1.20 1.40

Contextual Info: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 / MMBTA14 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW

MPSA63

Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: SPICE MODELS: MMBTA13 MMBTA14 MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · · · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 /MMBTA64 SOT-23 Ideal for Medium Power Amplification and Switching

J-STD-020A

Abstract: MMBTA13 MMBTA13-7 MMBTA14 MMBTA63 MMBTA64
Contextual Info: SPICE MODELS: MMBTA13 MMBTA14 MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain

MMBTA64

Abstract: MMBTA64-7-F J-STD-020A MMBTA13 MMBTA14 MMBTA63 DS30055
Contextual Info: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR SPICE MODEL: MMBTA63 MMBTA64 Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 / MMBTA14 Ideal for Medium Power Amplification and Switching High Current Gain

MMBTA64

Abstract: MMBTA64LT1 MMBTA64LT1G MMBTA63 MMBTA63LT1 MMBTA63LT1G
Contextual Info: MMBTA63LT1, MMBTA64LT1 MMBTA64LT1 is a Preferred Device Darlington Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES −30 Vdc