BTA63 Search Results

MMBTA13

Abstract: MMBTA14 MMBTA63 MMBTA64
Contextual Info: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M BTA63 / M M BTA64 Ideal for Medium Power Amplification and Switching

BTA64

Abstract: BTA63
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors BTA63LT1 MMBTA64LT1* PNP Silicon COLLECTOR 3 'Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Rating Sym bol Value Unit VCES -3 0 Vdc C o lle c to r-B a s e Voltage VCBO -3 0 Vdc E m itte r-B a se Voltage

Contextual Info: BTA63 I MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Types Available M M B TA 13 / M M BTA14 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 •

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
Contextual Info: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded

PMBTA64

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BTA63; PMBTA64 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification

GHW Connectors

Abstract: TDQ38 BTA60 bta61 bta80 bta11 BTA100 BTA32 bta50 bta81
Contextual Info: Version 1.2 December 1999 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 1999 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

Contextual Info: S EM IC O N D U C T O R BTA63/64 TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R G E N E R A L PUR PO SE A PPLICATION. D A RLIN G TO N T RA N SISTO R. DIM 2.9310.20 B 1.3010.20/-0.15 C M A X IM U M RA TING Ta=25°C SYMBOL CHARACTERISTIC Collector-Base

smd 2t1

Abstract: PMBTA64 smd transistor 2t1 MARKING CODE SMD IC marking p2U PMBTA63 2T1 SOT-23 sot-23 MARKING CODE 2T1
Contextual Info: • bbSBTai □□2SficlLi 355 M A P X N AMER P HI L IP S/DI SCRETE BTA63 PMBTA64 b?E i> P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal da rlin g to n transistors in a m icro m in ia tu re SM D envelope SOT-23 . Designed p rim a rily fo r p re a m p lifie r in p u t a pplications requiring high in p u t impedance.

TDQ38

Abstract: LTA201 LTA230 a1633 BTA32 B32315 LTA123 LTA143 LTA150 SDQ57
Contextual Info: 7 8 VCC3.3 SYNCOUT tied to SYNCIN through series resistor. Trace length matched to SYSCLK[0:7]/TITAN_CLK 1,14 1,12,14 6,7,12,13,14 1,12,14 1 16 2 15 3 14 4 13 5 12 6 11 7 10 9 8 S2 1 1 1 1 1 1 1 1 BLK_WR1 BLK_WR0 CLK_FREQ2 CLK_FREQ1 CLK_FREQ0 CLKMULT2 CLKMULT1

bta61

Abstract: bta60 TDQ38 GHW Connectors BTA100 LTA201 bta80 bta81 bta40 circuit bta42
Contextual Info: IDT79S145 Evaluation Board Manual Version 1.1 October 1999 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 1999 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

MIL-C-5015 amphenol ms3402

Abstract: 19 PIN CIRCULAR MS CONNECTORS burndy 460 hellermann deutsch MIL-C-5015 amphenol ms83723 cm-s-389t litton veam circular MIL-C-38999 series III deutsch b557 transistor AMPHENOL MIL-C 38999 Series II
Contextual Info: Beta Backshell CD Pages 1/12/03 1:07 PM Page 1 BETA BACKSHELL/ACCESSORY TOOLING GUIDE ® DANIELS MANUFACTURING CORPORATION CONTENTS Adaptor Tools Introduction 3 Adaptor Tools Technical Data Pages 5 Beta System Utilization 22 Connector Identification 23

MIL-C-26482 deutsch

Abstract: MIL-C-38999 series III deutsch ms83723 460 hellermann deutsch MIL-C-5015 amphenol ms3402 DMC CRIMP TOOL CHART litton veam circular D38999/46 backshell STRAIGHT ms3507 b557 transistor
Contextual Info: Beta Backshell CD Pages 1/12/03 1:07 PM Page 1 BETA BACKSHELL/ACCESSORY TOOLING GUIDE ® DANIELS MANUFACTURING CORPORATION Beta Backshell CD Pages 1/12/03 1:15 PM Page 2 CONTENTS Adaptor Tools Introduction 3 Adaptor Tools Technical Data Pages 5 Beta System

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

BTA64

Contextual Info: Tb M O T O R O L A SC Í X S T R S / R F> 6367254 MOTOROLA SC DE I t 3 t ? a S 4 □DöfiOhJ. ä 96D 8 2 0 8 1 CXSTRS/R, F D M A X I M U M R A T IN G S Sym bol V alue U n it V CES 30 Vdc C ollector-Base Voltage VCBO 30 Vdc Em itter-Base Voltage Ve b o 10

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

TRANSISTOR A63

Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Contextual Info: S E M IC O N D U C T O R tm BTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / BTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.

BTA64LT1

Contextual Info: M AXIM UM RATINGS Rating Symbol Value Unit C o llecto r-Em itter Voltage V cES - 30 Vdc C o llecto r-Base Voltage VCBO - 30 Vdc Em itter-Base Voltage Ve b o -1 0 Vdc 'c -500 m Adc Symbol Max Unit PD 225 mW 1.8 mW/°C r #j a 556 eC/W PD 300 mW 2.4 mW/°C r<