BT2907 Search Results

2907

Abstract: 2907a BT2907 MMBT2907-2B sot-23 marking LC amplifier 446 mhz pn 2907 MMBT2907A-2F PN2907 marking AM sot-23
Contextual Info: I Ileo IIUH PN2907/ A / M M BT2907/ A PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features Epitaxial Planar Die Construction Available in both Thru-Hole and Surface Mount Packages Suitable for Switching and Am plifier Applications SOT-23 TO-92 EJ -HfK L, A

BT2907A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Inform ation General Purpose Transistor M M BT2907A W T1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û package

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

SOT23 marking j.1

Abstract: FK 202
Contextual Info: m ro nu PN2907/ A / M M BT2907/ A PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features Epitaxial Planar Die Construction A vailable in both Thru-H ole and Surface M ount Packages Suitable fo r S w itching and A m p lifie r A pplications SOT-23 TO-92 EJ -H fK

BT2907

Contextual Info: BT2907 BT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g CM BT2907 = 2B CM BT2907A = 2F 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

MMBT2907 2F

Contextual Info: M OTO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon M M B T2 9 0 7 LT1 M M B T 2 9 0 7 A L T 1* C0LLE CT0R 3 'M o to ro la Preferred D evice MAXIM UM RATINGS Rating Symbol 2907 2907A Unit C ollector-E m itter Voltage v CEO -4 0

MMBT2907L

Abstract: BT2907AL
Contextual Info: XSTRS/R F MOTOROLA SC | fc,3t>72S4 □QflS'JTM 2 1EE T-J17-^ M A X I M U M R A T IN G S S ym bol MPS2907L MPS2907AL U n it C o lle ctor-E m itter Voltage VCEO 40 60 Vdc C ollector-Base V o lta g e VCBO Em itter-Base Voltage Vebo 5.0 Vdc *C 600 m A dc Rating

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

Contextual Info: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection

BT4403

Abstract: MBT3906
Contextual Info: Surface Mount Transistors NFN Transistors/SOT23 M a rk in g C ode* V CEO 1P 1N 2X 40 40 40 M M B TA 05 M M B TA 06 M M B T5551 1H 1G 3S M M B T A 42 1D Type N um ber M M BT2222A IM B T /M M B T 3 9 0 4 M M B T4401 h FE @ VCE/IC V CE SAT @ Ic /lß fT @ V ce/I c

N2907

Abstract: L2803
Contextual Info: uTECHNOLOGY rm FCRTURCS Maintains Constant Frequency at Low Output Currents Dual N-Channel MOSFET Synchronous Drive Programmable Fixed Frequency PLL Lockable Wide V|NRange: 3.5V to 36V Operation Low Minimum On-Time (<300ns) for High Frequency, Low Duty Cycle Applications

MMBT2907

Abstract: PN2907 PN2907A
Contextual Info: S E M IC O N D U C T O R ?, PN2907 BT2907 M a rk : 2B PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se a s g e n e ra l p u rp o s e a m p lifiers a n d s w itc h e s req uirin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ransistors BT2907LT1 BT2907ALT1* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Symbol 2907 2907A Unit Collector- Emitter Voltage VCEO -40 -60 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage

Contextual Info: MCC SOT-23 P la s tic -E n c a p s u la te T ran sisto rs M M B T 2907L T 1 TR A N SIS TO R PNP 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: j«_.- 2.4- ^ -0.6 A C dtiector-base voltage

BT2907

Abstract: PN2907
Contextual Info: F = A IR Q H 1 L J P SEMICONDUCTOR tm PN2907 BT2907 SOT-23 B M a rk : 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.

sbr830

Abstract: 1l431
Contextual Info: Index HER301 thru HER306 . 21 HER601 thru HER604 . 21 IM B D IMBD4448 . 5 IMBT3904. 15

MMBT2907

Abstract: bt2907a MMBT2907A
Contextual Info: M A X IM U M RATINGS Symbol Rating BT2907 BT2907Í -4 0 -6 0 Unit v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO -5 .0 Vdc ic -6 0 0 mAdc Collector Current — Continuous 60 BT2907LT1 BT2907ALT1* Vdc Collector-Emitter Voltage Vdc CASE 318-07, STYLE 6

tm 1621

Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
Contextual Info: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI

BTA05

Abstract: bt2907a SL493
Contextual Info: INDEX PART NO. PAGE PART NO. PAGE PART NO. PAGE PART NO. PAGE 1 N 4 Q 0 1 . 17 1 N 5 2 2 6 B . 3 7 1 N 9 6 5 B .3 6 1 N 4 0 0 1 G P .3 4

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

2n3219

Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333
Contextual Info: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943