MMBT2907 Search Results

TRANSISTOR m29

Abstract: marking M29
Contextual Info: MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking MMBT2907A M29 s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP

marking 1p transistor

Abstract: MMBT2222AT-7-F J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT TRANSISTOR MARKING CODE 1P
Contextual Info: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222AT Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-523

MARKING CODE 1P

Abstract: CODE 1P
Contextual Info: MMBT2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2907A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

Marking Code 2F

Abstract: code 2F
Contextual Info: MMBT2907A PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2222A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

MMBT2907A

Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

125OC

Abstract: MMBT2907LT1
Contextual Info: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range

Contextual Info: Product specification MMBT2222A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Complementary PNP type available MMBT2907A 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1

Contextual Info: Product specification MMBT2222AT SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 -0.1 1.0 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Ultra-Small Surface Mount Package +0.01 0.1-0.01 0.55 • Features ● Complementary PNP type available MMBT2907AT 0.35 3 +0.25

pn2907

Contextual Info: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information

Contextual Info: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0

2F P marking

Abstract: J-STD-020A MMBT2222AT MMBT2907AT
Contextual Info: MMBT2907AT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222AT Ultra-Small Surface Mount Package SOT-523 A C Mechanical Data · · · · · · · · B C TOP VIEW Case: SOT-523, Molded Plastic

2907 TRANSISTOR PNP

Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600

marking code nt amplifier

Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

MMBT2907A

Abstract: M7A transistor transistor M7A M7A MARKING SOT-23
Contextual Info: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 225 mWDWWV PNP epitaxial silicon, planar design 0.006 0.15 MIN. FEATURES 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA / 

MMBT2907AW

Abstract: MMBT2222AW
Contextual Info: MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE    A Complementary NPN Type Available MMBT2222AW Epitaxial Planar Die Construction

2F TRANSISTOR

Abstract: MMBT2222AE MMBT2907AE marking 2f
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2907AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B FEATURES Complementary NPN Type available(MMBT2222AE)

Contextual Info: Transistors SMD Type PNP General Purpose Amplifier MMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC=-600mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1

Contextual Info: Transistors SMD Type PNP General Purpose Amplifier MMBT2907AT SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 ● Complementary NPN Type Available MMBT2222AT +0.05 0.8-0.05 ● Ultra-Small Surface Mount Package +0.01 0.1-0.01

Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Complementary PNP type available MMBT2907A 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 2 +0.1 0.95-0.1

Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222AT SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 -0.1 1.0 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Ultra-Small Surface Mount Package +0.01 0.1-0.01 0.55 • Features ● Complementary PNP type available MMBT2907AT

Contextual Info: MMBT2907AT COLLECTOR PNP General Purpose Transistors 3 * “G” Lead Pb -Free 3 1 1 2 BASE SOT-523(SC-75) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value -60 -60 -5.0

transistor 2FX

Abstract: 1N916 MMBT2907ALT1
Contextual Info: MMBT2907ALT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating http://onsemi.com Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Symbol

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT2907AT Features • • • Capable of 150mWatts of Power Dissipation Operating and Storage Junction Temperatures -55℃ to 150℃