2F P MARKING Search Results

CMBT2907

Abstract: CMBT2907A
Contextual Info: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

Contextual Info: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4

Contextual Info: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR

CMBT2907

Abstract: CMBT2907A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS

CMBT2907

Abstract: CMBT2907A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14

smd diode schottky code marking 2F

Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.

smd diode marking YK

Contextual Info: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use

IC marking jw

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_

2fl40

Abstract: DIODE smd marking CODE YX smd code marking yx SMD diode JB
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Package : 2F D2FL40 Single Diode Unit-mm Weight 0.16g Typ / C ath o d e m a rk 400V 1.3A Feature • /J v P S M D • Small SMD • fiy - Y X • Low Noise • trr=50ns • trr=50ns ' É p i 3 angiH!0j »7.X \ H-yI-ril9-(W)

smd diode marking code cog

Abstract: LAI smd marking code smd diode marking 4d FT-51 D2FS6 4d smd diode
Contextual Info: Schottky Barrier Diode wnnm o u t lin e Single Diode D2FS6 Unit I mm Package : 2F Weight 0.16« Typ • hy —K v - ? 60V 1.5A Feature CD0— W— °(D • /JvffiS M D • Sm all SM D • P rrsm T K ^ V S / i & S I • P rrsm Rating Main Use • Sw itching Regulator

smd diode marking 3fs

Abstract: smd DIODE 3FS smd diode schottky code marking UX smd diode marking LM smd diode schottky code marking 2F Schottky Diode Marking UX diode Marking Code lm MARKING 3FS
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 2F D3FS6 o i Unit^mm Weight 0.16g Typ 7 -F v -? Cathode m ark 60V 3A ®i Feature • /J v P S M D • S m all SM D • Tj=150°C • Tj=150°C » P R R S M T’A ' ^ V ï / i f i l Œ » P r r s m Rating

Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r

smd DIODE 3FS

Abstract: smd diode marking 3fs
Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS6 U n it! mm Package : 2F W eight 0.16g Typ ij 7 - K v - * ' C ulliod o mm k 3FS 6 8D 60V 3A Feature • /jv s y s M D yîsxMîS. • P rrs m ;F K 5 • Small SMD • P h r s m Rating W T y p e No.

Contextual Info: B 1-COLOR O P E R A T I N G DIALIGHT P/N CATHODE MARKING COLOR CHARACTERISTICS mA M I N . TY P . M A X . .149/.134 [3.80/3.40] 5 9 7 - 2 0 0 1 - 2 1 3F 5 9 7 - 2 0 0 1 -202F RED 5 9 7 - 2 3 0 1 - 2 1 3F 597-2301 -2 0 2F GREEN 5 9 7 - 2 4 0 1 - 2 1 3F 5 9 7 - 2 4 0 1 -202F

Diode Marking ef

Abstract: Diode type SMD marking PJ smd marking pj marking smd NU pj SMD diode smd diode pj D2FS4 smd Pj 75 pj 71 diode
Contextual Info: Schottky Barrier Diode wnnw OUTLINE Single Diode D2FS4 Unit-mm Package I 2F Weight 0.16g Typ ay-K -y-? / Cathode mark 40V 1,6A Feature • /JvffiSMD • Small SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating •w.f.ns»? Type No. Main Use • D C /D C u y / K - 9

2FL20U

Contextual Info: Super Fast Recovery Diode Single D iode OUTLINE Package : 2F m tm D2FL20U U n it- m m W e ig h t 0 .1 6 g T y p io y - F - e - ? / C athode m a rk 200V 1.5A 'Iggsl Feature • /Jv P S M D • Sm all SM D • f îy - f X ' • Low Noise • trr=35ns • trr=35ns

D3FJ10

Abstract: smd marking Yd J532
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 2F D3FJ10 100V3A U nit-m m W eight 0 .1 6 g T y p iU7 - K v - ? Feature • /JvSUSMD • Small SMD • Tj=150°C • <SIr= 0.4mA • Tj=150°C • Low lR = 0 .4 m A U (. < 11 • • Resistance for thermal run-away

DSWM9040

Abstract: M24308/3-2F SP40T transistor j42 bite 15-pin D type connector J31-J32 30J40
Contextual Info: F E AT U R E S MODEL NO. DSWM9040 350 - 450 MHz 1.7 dB Insertion Loss 55 dB Isolation 6 Line Encoded TTL Control Constant Phase Bite Circuitry SMA Connectors HDI CONNECTOR 15 PIN M24308/3-2F P IN Dio d e Switch S P40T J1 .218 DIA 6 HOLES 8.250 .25 J3 J38 J11 J12 J13-ROW 2

Contextual Info: F E AT U R E S MODEL NO. DSWM9040 350 - 450 MHz 1.7 dB Insertion Loss 55 dB Isolation 6 Line Encoded TTL Control Constant Phase Bite Circuitry SMA Connectors HDI CONNECTOR 15 PIN M24308/3-2F P IN Dio d e Switch S P40T J1 .218 DIA 6 HOLES 8.250 .25 J3 J38 J11 J12 J13-ROW 2

3fs 4a

Abstract: smd DIODE 3FS smd diode marking 3fs
Contextual Info: Schottky Barrier Diode Single Diode O U T L IN E w n n w D3FS4A U nit! mm P a c k a g e : 2F Weight 0.16g Typ •hy - K - 7 - y 4 0 V 2 .6 A / C arhode m ark Feature I m • Small SMD • Low Vf=0.45V • Prbsm Rating • /JvS yS M D • f f i V f = 0.45 V

a77 smd

Abstract: D2FK60 J532 smd diode 0L
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Package : 2F D2FK60 Single Diode U n it-m m W e ig h t 0 .1 6 g T yp ¿ 7 -P V -? 600V 1.5A ’ • /JvSUSMD • S m all S M D •ra ttŒ • trr=75ns • trr= 75n s • < S V f = 1 .3 V • Low V f= 1.3V * v 2FK