BT2222A Search Results

BT4403

Abstract: MBT3906
Contextual Info: Surface Mount Transistors NFN Transistors/SOT23 M a rk in g C ode* V CEO 1P 1N 2X 40 40 40 M M B TA 05 M M B TA 06 M M B T5551 1H 1G 3S M M B T A 42 1D Type N um ber M M BT2222A IM B T /M M B T 3 9 0 4 M M B T4401 h FE @ VCE/IC V CE SAT @ Ic /lß fT @ V ce/I c

KH 2222

Abstract: hp 2222 equivalent of 2222 NPN 2222 A BT2222 2222AM
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B T2222LT1 M M BT2222ALT1* G eneral Purpose Transistors NPN Silicon colle3ctor 'M o to ro la P referred Device 1 BASE Jl§ 2 EMITTER MAXIMUM RATINGS Rating Symbol 2222 2222A Unit C o lle c to r-E m itte r Voltage VCEO

MMBT2222A

Contextual Info: This I tr Material In □ . m tr1 Discrete POW ER & Signal Technologies LM National Semiconductor” Surface Mount Transistors LU Copyrighted a a xa -C J3 tr By Ln —3 a NPN General Purpose Amplifiers and Switches V D evice No. SOT-23 Mark M M BT100 (N1)

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

BT2222A

Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
Contextual Info: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.

2N1026

Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

BT2222A

Abstract: MMBT2222ALT1 1P BT2222
Contextual Info: M AXIMUM RATINGS Symbol M MBT2222 BT2222A Unit C o lle c to r -E m itte r V o lta g e Rating V CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 C o lle c to r C u rre n t — C o n tin u o u s 6.0

MRF857S

Abstract: transistor bd136 MRF857S equivalent 305D-01
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.

T2222A

Abstract: BT2222ALT1 BT2222
Contextual Info: MAXIMUM RATINGS Symbol MMBT2222 BT2222A Unit C o lle ctor-E m itter Voltage VCEO 30 40 Vdc C ollector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 Rating C o lle ctor C u rrent — C o ntinuous Vdc 6,0 600 C MMBT2222LT1 BT2222ALT1* m A dc

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: H E M iQ Q N P U S T O R PN2222A C< B' BT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­

2N3134

Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
Contextual Info: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

Contextual Info: PMBT2222 BT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.

CM16C550P

Abstract: 4.7 uf/50v smd capacitor sad1 diode smd NPN CD100 transistor SPER 1A1 C4 0.1 uf/50v smd capacitor DIALCO C01100 cm16c550pe TRAY DAEWON TSOP
Contextual Info: Rev. 2.1 i960 Rx I/O Processor Design Guide November, 1997 Order Number: 273004-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

BT2222AW

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Prelim inary Inform ation General Purpose Transistor BT2222AW T1 NPN Silicon M otorola Preferred D evice These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T - 3 2 3 /S C -7 0 package which is

BT2222A

Abstract: MMBT2222 BT2222AT transistor 2222a MMBT2222A MBT2222
Contextual Info: MOTOROLA 6367254 SC iXSTRS/R M OT O RO L A SC F> Tt CXSTRS/R I DE | ta3ti72S t4 0 0 f l S 0 3 5 F 96D 8 2 0 3 2 M A X IM U M RATINGS MMBT2222 BT2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage

tm 1621

Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
Contextual Info: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI

BTA05

Abstract: bt2907a SL493
Contextual Info: INDEX PART NO. PAGE PART NO. PAGE PART NO. PAGE PART NO. PAGE 1 N 4 Q 0 1 . 17 1 N 5 2 2 6 B . 3 7 1 N 9 6 5 B .3 6 1 N 4 0 0 1 G P .3 4

Contextual Info: Transistors Reel = 500pcs. SOT23 Case NPN Bag = 100pcs&#39; m i n iR e e l O rd e r Type R a tin g s m in iB a g N um ber V j • O rd e r M d VCEO Ic hpE @Ic fx P a rt V mA M in -M a x V ce (M H z ) M a rk in g 25V 500m A N u m b e r K iS S S ! N P N G e n e ra l P u rp o se

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB