BT2222_ Search Results
BT2222_ Datasheets (22)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BT2222 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 163.24KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT2222 | Raytheon | Selection Guide 1977 | Scan | 47.8KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT2222A | Unknown | Shortform Transistor PDF Datasheet | Short Form | 172.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT2222A | Raytheon | Selection Guide 1977 | Scan | 47.8KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT2222AT | Unknown | Shortform Transistor PDF Datasheet | Short Form | 172.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT2222T | Unknown | Shortform Transistor PDF Datasheet | Short Form | 163.24KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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CREATEK Microelectronics | NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A
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Shikues Semiconductor | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A
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Shandong Jingdao Microelectronics Co Ltd | NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222AT
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Shikues Semiconductor | Silicon Epitaxial Planar Transistor for switching and amplifier applications | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222AW
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CREATEK Microelectronics | Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222ADW
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CREATEK Microelectronics | Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222AM
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JCET Group | MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A
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JCET Group | NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A
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Microdiode Semiconductor | SOT-23, NPN, epitaxial planar die construction. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A-G
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JCET Group | MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A 1P
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JCET Group | MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A
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AK Semiconductor | MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT2222_ Price and Stock
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Diodes Incorporated MMBT2222ALP4-7BTRANS NPN 40V 0.6A X2-DFN1006-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222ALP4-7B | Tape & Reel | 550,000 | 10,000 |
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MMBT2222ALP4-7B | 1 |
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MMBT2222ALP4-7B | 25,672 |
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MMBT2222ALP4-7B | 24 Weeks | 10,000 |
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MMBT2222ALP4-7B | 26 Weeks | 10,000 |
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MMBT2222ALP4-7B | 20,000 |
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Diodes Incorporated MMBT2222AT-7-FTRANS NPN 40V 0.6A SOT-523 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222AT-7-F | Tape & Reel | 231,000 | 3,000 |
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MMBT2222AT-7-F | Tape & Reel | 27,000 | 12 Weeks | 3,000 |
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MMBT2222AT-7-F | 14,625 |
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MMBT2222AT-7-F | Bulk | 100 |
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MMBT2222AT-7-F | 162,000 |
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MMBT2222AT-7-F | 12 Weeks | 3,000 |
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MMBT2222AT-7-F | 14 Weeks | 3,000 |
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MMBT2222AT-7-F | 18,000 | 3,000 |
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onsemi MBT2222ADW1T1GTRANS 2NPN 40V 600MA SC88/SC70 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBT2222ADW1T1G | Tape & Reel | 87,000 | 3,000 |
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MBT2222ADW1T1G | Tape & Reel | 60,000 | 29 Weeks | 3,000 |
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MBT2222ADW1T1G | Cut Tape | 3 | 1 |
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MBT2222ADW1T1G | Bulk | 200 |
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MBT2222ADW1T1G | 2,327 | 1 |
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MBT2222ADW1T1G | 1 |
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MBT2222ADW1T1G | 441,000 | 30 Weeks | 3,000 |
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MBT2222ADW1T1G | 16 Weeks | 3,000 |
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MBT2222ADW1T1G | 18,000 |
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MBT2222ADW1T1G | 24,000 |
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MBT2222ADW1T1G | 30,000 |
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Diodes Incorporated MMBT2222AQ-7-FTRANS NPN 40V 0.6A SOT-23-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222AQ-7-F | Tape & Reel | 12,000 | 3,000 |
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MMBT2222AQ-7-F | 11,050 |
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MMBT2222AQ-7-F | 1 |
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MMBT2222AQ-7-F | 30,000 | 14 Weeks | 3,000 |
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Buy Now | |||||
Nexperia PMBT2222AMBYLTRANS NPN 40V 0.6A DFN1006B-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBT2222AMBYL | Tape & Reel | 10,000 | 10,000 |
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PMBT2222AMBYL | 19,850 | 1 |
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PMBT2222AMBYL | 1,472 |
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BT2222_ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits. |
OCR Scan |
PMBT2222 PMBT2222A BT2222_ BT2222A |