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    MBT3906 Search Results

    MBT3906 Datasheets (13)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBT3906DW
    Unknown Dual General Purpose Transistor PNP+PNP Silicon Original PDF 779.61KB 6
    MBT3906DW
    Weitron Dual General Purpose Transistor PNP+PNP Silicon Original PDF 329.33KB 6
    MBT3906DW1
    On Semiconductor Dual General Purpose Transistors Original PDF 101.36KB 6
    MBT3906DW1T1
    E-Tech Electronics Dual General Purpose Transistors Original PDF 733.2KB 10
    MBT3906DW1T1
    Leshan Radio Company Dual General Purpose Transistors Original PDF 429.27KB 10
    MBT3906DW1T1
    Motorola Dual General Purpose Transistors Original PDF 1.25MB 12
    MBT3906DW1(T1)
    Unknown Silicon PNP Transistor Original PDF 429.27KB 10
    MBT3906DW1T1
    On Semiconductor MBT3906 - TRANSISTOR 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-88, 6 PIN, BIP General Purpose Small Signal Original PDF 133.94KB 8
    MBT3906DW1T1
    On Semiconductor Dual General Purpose Transistors Original PDF 101.36KB 6
    MBT3906DW1T1-D
    On Semiconductor Dual General Purpose Transistor Original PDF 103.8KB 8
    MBT3906DW1T1G
    On Semiconductor Dual General Purpose Transistor Original PDF 102.94KB 6
    MBT3906DW1T2G
    On Semiconductor MBT3906 - Dual PNP Bipolar Transistor Original PDF 127.51KB 6
    badge MMBT3906
    Microdiode Semiconductor (MDD) Small Signal Bipolar Transistor Original PDF
    SF Impression Pixel

    MBT3906 Price and Stock

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    onsemi MBT3906DW1T1G

    Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
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    Verical () MBT3906DW1T1G 54,000 6,508
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    MBT3906DW1T1G 42,000 3,000
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    Avnet Americas MBT3906DW1T1G Tape & Reel 3,513,000 65 Weeks 3,000
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    Arrow Electronics () MBT3906DW1T1G 39,130 1
    • 1 $0.11
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    MBT3906DW1T1G Cut Strips 14 65 Weeks 1
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    RS MBT3906DW1T1G Bulk 2 Weeks 3,000
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    Onlinecomponents.com MBT3906DW1T1G 42,000
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    Bristol Electronics () MBT3906DW1T1G 106,145
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    MBT3906DW1T1G 29,683 1
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    Quest Components () MBT3906DW1T1G 22,788
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    MBT3906DW1T1G 22,788
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    MBT3906DW1T1G 6,704
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    MBT3906DW1T1G 957
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    MBT3906DW1T1G 298
    • 1 $0.06
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    Rochester Electronics MBT3906DW1T1G 54,000 1
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    TME MBT3906DW1T1G 14,460 1
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    Ameya Holding Limited MBT3906DW1T1G 3,000
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    Avnet Asia MBT3906DW1T1G Tape & Reel 65 Weeks 42,000
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    Avnet Silica MBT3906DW1T1G 60,000 45 Weeks 3,000
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    Component Electronics, Inc MBT3906DW1T1G 865
    • 1 $0.38
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    EBV Elektronik MBT3906DW1T1G 46 Weeks 3,000
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    Maritex MBT3906DW1T1G 90 1
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    Master Electronics MBT3906DW1T1G 42,000
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    Win Source Electronics MBT3906DW1T1G 223,440
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    onsemi MBT3906DW1T1

    Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MBT3906DW1T1 19,023 6,834
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    Quest Components () MBT3906DW1T1 4,271
    • 1 $0.25
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    • 100 $0.11
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    MBT3906DW1T1 2,384
    • 1 $0.49
    • 10 $0.49
    • 100 $0.22
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    MBT3906DW1T1 2,320
    • 1 $0.21
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    • 100 $0.06
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    MBT3906DW1T1 2,220
    • 1 $0.15
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    MBT3906DW1T1 1,600
    • 1 $0.58
    • 10 $0.58
    • 100 $0.26
    • 1000 $0.18
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    onsemi MMBT3906TT1G

    Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 200 mW, SOT-416, Surface Mount - Tape and Reel (Alt: MMBT3906TT1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas () MMBT3906TT1G Tape & Reel 762,000 3,000
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    MMBT3906TT1G Ammo Pack 1
    • 1 $0.16
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    • 100 $0.06
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    Newark () MMBT3906TT1G Cut Tape 3,882 1
    • 1 $0.16
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    MMBT3906TT1G Tape & Reel 3,882 10
    • 1 $0.16
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    MMBT3906TT1G Tape & Reel 2,190 100
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    MMBT3906TT1G Cut Tape 2,190 5
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    RS MMBT3906TT1G Bulk 200
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    Bristol Electronics () MMBT3906TT1G 53,237
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    MMBT3906TT1G 2,908 1
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    MMBT3906TT1G 2,037 1
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    Rochester Electronics MMBT3906TT1G 31,799 1
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    TME MMBT3906TT1G 1
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    Avnet Asia MMBT3906TT1G 59 Weeks 90,000
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    Avnet Silica MMBT3906TT1G 225,000 45 Weeks 3,000
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    EBV Elektronik MMBT3906TT1G 36,000 46 Weeks 3,000
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    Flip Electronics MMBT3906TT1G 78,000
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    Maritex MMBT3906TT1G 6,224 5
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    Master Electronics MMBT3906TT1G 102,000
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    Win Source Electronics MMBT3906TT1G 321,000
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    Diodes Incorporated MMBT3906-7-F

    - Tape and Reel (Alt: MMBT3906-7-F)
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    Avnet Americas MMBT3906-7-F Tape & Reel 360,000 3,000
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    TME MMBT3906-7-F 1
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    Rutronik MMBT3906-7-F Tape & Reel 5 1
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    Avnet Silica MMBT3906-7-F 46 Weeks 3,000
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    Component Electronics, Inc MMBT3906-7-F 3,115
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    Win Source Electronics MMBT3906-7-F 15,000
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    Nexperia MMBT3906,215

    - Tape and Reel (Alt: MMBT3906,215)
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    Avnet Americas MMBT3906,215 Tape & Reel 120,000 53 Weeks, 1 Days 3,000
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    Maritex MMBT3906,215 5,518 1
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    MBT3906 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original
    mbt3906dwot-363sc-88 PDF

    Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original
    mbt3906dwot-363sc-88mmbt3906dw PDF

    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t123/sot363/sc PDF

    1N916

    Abstract: MBT3906DW1T1
    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t123/sot363/scr14525+2mbt3906dw1t1/d1n916 PDF

    1N916

    Abstract: MBT3906DW1T1 MBT3906DW1T1G
    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t1ot-23/sot-323ot-363mbt3906dw1t1/d+21n916mbt3906dw1t1g PDF

    Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original
    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot PDF

    EE-43007

    Abstract: EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111
    Contextual Info: DN06023/D Design Note – DN06023/D Universal AC 15 W 4 Cell Charger Device Application Input Voltage Output Power Topology I/O Isolation MBT3906 MC33340 NCP1055 NIS6111 4 Cell NiCd-NiMH Battery Charger Universal 90-264 Vac 15 Watt Flyback Optional Other Specifications


    Original
    dn06023/dmbt3906mc33340ncp1055+7nis6111ee-43007ee 23 bobbin verticaldiode w1core ee 25 transformeree-42211ee 25 bobbin vertical PDF

    Contextual Info: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1smbt3906dw1ot-23/sot-323ot-363+2aec-q101mbt3906dw1t1/d PDF

    MBT3904DW1T1

    Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original
    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot+2sot 363 np1n916 PDF

    MBT3906DW1T1G

    Abstract: 1N916
    Contextual Info: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t1got-23/sot-323ot-363mbt3906dw1t1/d+11n916 PDF

    1N916

    Abstract: MBT3906DW VCE-30
    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original
    mbt3906dwot-363sc-881n916+1vce-30 PDF

    MBT3904 datasheet

    Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original
    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot+5363/scstyle00mbt3904mbt3904 datasheetmbt3904 equivalent PDF

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original
    mbt3904dwlt1/dmbt3904dw1timbt3906dw1t1mbt3946dw1t1+1123/sotmbt3904dwimbt3906dwimbt3946dwi14wi-247mbt3906dwitimbt390mbt3946dw1mbt3904dw1i7050mbt3904dwiti PDF

    Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t1gsmbt3906dw1t1g23/sotmbt3906dw1t1/d PDF

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Contextual Info: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


    Original
    sc-88ot-363419b-02ot-563+763a-01so-16751b-05dual transistors" pnp npnbc847cpdw1t1dual pnpbc858cdw1t1 PDF

    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t1ot-23/sot-323ot-363mbt3906dw1t1/d PDF

    1N916

    Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original
    mbt3904dw1t1/dmbt3904dw1t1mbt3906dw1t1mbt3946dw1t1+223/sot1n916 PDF

    5070H

    Abstract: MBT3904 datasheet MBT3904 MBT3904DW1T1 MBT3946 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original
    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot+5363/scmbt39045070hmbt3904 datasheetmbt3946 PDF

    1N916

    Abstract: MBT3906DW
    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO


    Original
    mbt3906dwot-363sc-881n916 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original
    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot PDF

    MBT3906DW

    Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original
    mbt3904dw1t1/dmbt3904dw1t1mbt3906dw1t1mbt3946dw1t1+323/sotmbt3906dw1n916 PDF

    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value


    Original
    mbt3906dwot-363sc-88 PDF

    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    mbt3906dw1t1ot-23/sot-323ot-363ot-363/sc-88 PDF

    1N916

    Abstract: MBT3906DW
    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


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