MBT3904 Search Results

Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

Contextual Info: MBT3904DW General Purpose Transistor NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in

1N916

Abstract: MBT3904DW1T1
Contextual Info: MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in

Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications

1N916

Abstract: MBT3904DW MMBT3904W
Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol

Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in

Contextual Info: MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in

Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol

Dual General Purpose Transistors SC70-6

Abstract: marking code 12 SOT-363 amplifier marking 12 SOT-363 amplifier SOT-363 footprint 1N916 419B-02 MBT3904DW1T1 MBT3904DW1T1G MBT3904DW2T1 MBT3904DW2T1G
Contextual Info: MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two

MBT3904DW1T1

Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications

MBT3904 datasheet

Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded

Contextual Info: MBT3904DW General Purpose Transistor NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

MBT3906DWITI

Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

sc70-6 733

Abstract: .731 marking sc70-6
Contextual Info: MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two

MBT3904DW1T1

Abstract: MBT3904DW1T1G MBT3904DW2T1 MBT3904DW2T1G
Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two

Contextual Info: MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two

1N916

Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

MBT3904DW1T1G

Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in

MBT3904DW

Abstract: 1N916 MMBT3904W
Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value

5070H

Abstract: MBT3904 datasheet MBT3904 MBT3904DW1T1 MBT3946 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded

1N916

Abstract: 419B-02 MBT3904DW1T1 MBT3904DW1T1G MBT3904DW2T1 MBT3904DW2T1G SC70-6 Dual General Purpose Transistors SC70-6
Contextual Info: MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded

MBT3906DW

Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed