MBT3906DW Search Results

Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40

Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40

Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in

1N916

Abstract: MBT3906DW1T1
Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in

1N916

Abstract: MBT3906DW1T1 MBT3906DW1T1G
Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications

Contextual Info: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

MBT3904DW1T1

Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications

MBT3906DW1T1G

Abstract: 1N916
Contextual Info: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

1N916

Abstract: MBT3906DW VCE-30
Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol

MBT3904 datasheet

Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded

MBT3906DWITI

Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

SMBT3906DW1T1G

Abstract: MBT3906DW1T1G
Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in

1N916

Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

5070H

Abstract: MBT3904 datasheet MBT3904 MBT3904DW1T1 MBT3946 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded

1N916

Abstract: MBT3906DW
Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded

MBT3906DW

Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value

Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

1N916

Abstract: MBT3906DW
Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.