MBT390 Search Results

MBT390 Datasheets (38)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBT3904	On Semiconductor	Programmable Precision Reference	Original	PDF	38.82KB	4
MBT3904DW	E-Tech Electronics	Dual General Purpose Transistors	Original	PDF	733.2KB	10
MBT3904DW	Weitron	Dual General Purpose Transistor NPN+NPN Silicon	Original	PDF	236KB	7
MBT3904DW1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	108.15KB	8
MBT3904DW1T1	E-Tech Electronics	Dual General Purpose Transistors	Original	PDF	733.2KB	10
MBT3904DW1T1	Leshan Radio Company	Dual General Purpose Transistors	Original	PDF	429.27KB	10
MBT3904DW1T1	Motorola	Dual General Purpose Transistors	Original	PDF	1.25MB	12
MBT3904DW1T1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	104.29KB	7
MBT3904DW1T1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	108.15KB	8
MBT3904DW1T1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	295.7KB	12
MBT3904DW1T1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	104.3KB	7
MBT3904DW1T1/D	On Semiconductor	SEMICONDUCTOR TECHNICAL DATA	Original	PDF	282.26KB	12
MBT3904DW1T1/D	On Semiconductor	SOT-63/SC-8 CASE 419B STYLE 1	Original	PDF	295.7KB	12
MBT3904DW1T1/D	On Semiconductor	CASE 419B-1, STYLE 1	Original	PDF	348.65KB	12

MBT3904DW1T1-D	On Semiconductor	Dual General Purpose Transistor	Original	PDF	107.74KB	8
MBT3904DW1T1G	On Semiconductor	Dual General Purpose Transistors	Original	PDF	104.31KB	7
MBT3904DW1T1G	On Semiconductor	Dual General Purpose Transistors	Original	PDF	108.14KB	8
MBT3904DW1T3	On Semiconductor	General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000	Original	PDF	166.86KB	7
MBT3904DW1T3	On Semiconductor	Dual General Purpose Transistors	Original	PDF	108.15KB	8
MBT3904DW1T3G	On Semiconductor	General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000	Original	PDF	166.86KB	7

MBT390 Price and Stock

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Diotec Semiconductor AG MMBT3904 BJT - SOT-23 - 40V - 200mA - NPN - 0.35W - 150°C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MMBT3904		222,000			1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Rutronik	MMBT3904	Tape & Reel	75,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Maritex	MMBT3904		1,430		1	1 $0.01 10 $0.01 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
onsemi MMBT3904LT3G The MMBT3904LT3G is a general-purpose NPN silicon transistor designed for low-power amplification and switching applications.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MMBT3904LT3G		190,000			1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Avnet Americas	MMBT3904LT3G	Tape & Reel	3,884,000	53 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
TME	MMBT3904LT3G				10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote
Ameya Holding Limited	MMBT3904LT3G		10,100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	MMBT3904LT3G		2,165,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Wuhan P&S	MMBT3904LT3G		100,000		1	1 $0.02 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
Rectron Semiconductor MMBT3904 Small Signal Bipolar Transistor - 0.2A I(C) - 40V V(BR)CEO - 1-Element - NPN - Silicon
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MMBT3904		136,000			1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MMBT3906TT1G PNP Bipolar Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MMBT3906TT1G		102,000			1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Newark ()	MMBT3906TT1G	Cut Tape	3,882		1	1 $0.16 10 $0.16 100 $0.06 1000 $0.04 10000 $0.04	Buy Now
	MMBT3906TT1G	Tape & Reel	3,882		10	1 $0.16 10 $0.16 100 $0.06 1000 $0.04 10000 $0.04	Buy Now
	MMBT3906TT1G	Tape & Reel	2,190		100	1 - 10 - 100 $0.07 1000 $0.05 10000 $0.05	Buy Now
	MMBT3906TT1G	Cut Tape	2,190		5	1 - 10 $0.10 100 $0.07 1000 $0.05 10000 $0.05	Buy Now
RS	MMBT3906TT1G	Bulk			200	1 - 10 - 100 - 1000 $0.12 10000 $0.11	Get Quote
Rochester Electronics	MMBT3906TT1G		31,799		1	1 - 10 - 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
Avnet Asia	MMBT3906TT1G			59 Weeks	90,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Avnet Silica	MMBT3906TT1G		225,000	45 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MMBT3906TT1G		36,000	46 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MMBT3906TT1G		78,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	MMBT3906TT1G		321,000			1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
onsemi SMMBT3906LT1G 200 mA 40 V PNP Bipolar Junction Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	SMMBT3906LT1G		87,000			1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Avnet Americas	SMMBT3906LT1G	Tape & Reel	36,000	74 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
RS	SMMBT3906LT1G	Bulk			100	1 - 10 - 100 $0.08 1000 $0.07 10000 $0.07	Get Quote
Avnet Silica	SMMBT3906LT1G		90,000	53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SMMBT3906LT1G		12,000	53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Flip Electronics	SMMBT3906LT1G		21,000			1 $0.01 10 $0.01 100 $0.01 1000 $0.01 10000 $0.01	Get Quote
Maritex	SMMBT3906LT1G		89,984		10	1 $0.23 10 $0.07 100 $0.05 1000 $0.04 10000 $0.03	Buy Now
Wuhan P&S	SMMBT3906LT1G		39,000		1	1 $0.04 10 $0.04 100 $0.03 1000 $0.02 10000 $0.02	Buy Now

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MBT390 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40	Original	mbt3906dw ot-363 sc-88	PDF
Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics	Original	mbt3904dw ot-363 sc-88	PDF
Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40	Original	mbt3906dw ot-363 sc-88 mmbt3906dw	PDF
Contextual Info: MBT3904DW General Purpose Transistor NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics	Original	mbt3904dw ot-363 sc-88	PDF
Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in	Original	mbt3904dw1t1g mbt3904dw2t1g smmbt3904dw1tg 23/sot +2363/sc mbt3904dw1t1/d	PDF
Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1t1 23/sot 363/sc	PDF
1N916 Abstract: MBT3904DW1T1 Contextual Info: MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	mbt3904dw1t1 23/sot r14525 mbt3904dw1t1/d +11n916	PDF
1N916 Abstract: MBT3906DW1T1 Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1t1 23/sot 363/sc r14525 +2mbt3906dw1t1/d 1n916	PDF
1N916 Abstract: MBT3906DW1T1 MBT3906DW1T1G Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1t1 ot-23/sot-323 ot-363 mbt3906dw1t1/d +21n916 mbt3906dw1t1g	PDF
Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications	Original	mbt3904dw1t1 mbt3906dw1t1 mbt3946dw1t1 23/sot	PDF
EE-43007 Abstract: EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111 Contextual Info: DN06023/D Design Note – DN06023/D Universal AC 15 W 4 Cell Charger Device Application Input Voltage Output Power Topology I/O Isolation MBT3906 MC33340 NCP1055 NIS6111 4 Cell NiCd-NiMH Battery Charger Universal 90-264 Vac 15 Watt Flyback Optional Other Specifications	Original	dn06023/d mbt3906 mc33340 ncp1055 +7nis6111 ee-43007 ee 23 bobbin vertical diode w1 core ee 25 transformer ee-42211 ee 25 bobbin vertical	PDF
1N916 Abstract: MBT3904DW MMBT3904W Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol	Original	mbt3904dw ot-363 sc-88 1n916 +1mmbt3904w	PDF
Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in	Original	mbt3904dw1t1g mbt3904dw2t1g smmbt3904dw1tg ot-23/sot-323 +4ot-363 ot-363/sc-88/sc70-6 aec-q101	PDF
Contextual Info: MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	mbt3904dw1t1 23/sot	PDF

Dual General Purpose Transistors SC70-6 Abstract: marking code 12 SOT-363 amplifier marking 12 SOT-363 amplifier SOT-363 footprint 1N916 419B-02 MBT3904DW1T1 MBT3904DW1T1G MBT3904DW2T1 MBT3904DW2T1G Contextual Info: MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two	Original	mbt3904dw1t1 mbt3904dw2t1 ot-23/sot-323 ot-363 +10ot-363/sc-88/sc70-6 dual general purpose transistors sc70-6 marking code 12 sot-363 amplifier marking 12 sot-363 amplifier sot-363 footprint 1n916 419b-02 mbt3904dw1t1g mbt3904dw2t1g	PDF
Contextual Info: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1 smbt3906dw1 ot-23/sot-323 ot-363 +2aec-q101 mbt3906dw1t1/d	PDF
MBT3904DW1T1 Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications	Original	mbt3904dw1t1 mbt3906dw1t1 mbt3946dw1t1 23/sot +2sot 363 np 1n916	PDF
MBT3906DW1T1G Abstract: 1N916 Contextual Info: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1t1g ot-23/sot-323 ot-363 mbt3906dw1t1/d +11n916	PDF
1N916 Abstract: MBT3906DW VCE-30 Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol	Original	mbt3906dw ot-363 sc-88 1n916 +1vce-30	PDF
MBT3904 datasheet Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded	Original	mbt3904dw1t1 mbt3906dw1t1 mbt3946dw1t1 23/sot +5363/sc style00 mbt3904 mbt3904 datasheet mbt3904 equivalent	PDF
Contextual Info: MBT3904DW General Purpose Transistor NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics	Original	mbt3904dw ot-363 sc-88	PDF
MBT3906DWITI Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed	Original	mbt3904dwlt1/d mbt3904dw1ti mbt3906dw1t1 mbt3946dw1t1 +1123/sot mbt3904dwi mbt3906dwi mbt3946dwi 14wi-247 mbt3906dwiti mbt390 mbt3946dw1 mbt3904dw1 i7050 mbt3904dwiti	PDF
Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1t1g smbt3906dw1t1g 23/sot mbt3906dw1t1/d	PDF
SMBT3906DW1T1G Abstract: MBT3906DW1T1G Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	mbt3906dw1t1g smbt3906dw1t1g ot-23/sot-323 ot-363 +2aec-q101 mbt3906dw1t1/d	PDF

MBT390 Search Results

MBT390 Datasheets (38)

MBT390 Price and Stock

Diotec Semiconductor AG MMBT3904

onsemi MMBT3904LT3G

Rectron Semiconductor MMBT3904

onsemi MMBT3906TT1G

onsemi SMMBT3906LT1G

MBT390 Datasheets Context Search

1N916

1N916

1N916

EE-43007

1N916

Dual General Purpose Transistors SC70-6

MBT3904DW1T1

MBT3906DW1T1G

1N916

MBT3904 datasheet

MBT3906DWITI

SMBT3906DW1T1G