BFR92 Search Results

s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52

BFR92R

Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Contextual Info: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23

BFR92AR

Abstract: 706 TRANSISTOR sot-23 720 SOT23-3 BFR92A BFR92AGELB-GS08 BFR92ARGELB-GS08 BFR92AW BFR92AW-GS08 339 SOT23-3
Contextual Info: BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: BFR92/BFR92R ViSHAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ A pplications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

BFR92

Abstract: silicon npn planar rf transistor sot 143 transistor bfr92
Contextual Info: BFR92 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C 3 2 1 1 B 3 E 2

CD074

Contextual Info: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base

Contextual Info: MOTOROLA Order this document by BFR92ALT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors BFR92ALT1 Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface

BFR92A

Abstract: BFR92AW
Contextual Info: bbSB'm P hilips Sem iconductors — ÜD2517M 31fl • APX N AMER HER PHILIPS/DISCRETE Prelim inary specification D— — ü ï i i — ■ ■ b7E b? NPN 5 GHz wideband transistor FEATURES BFR92AW PINNING • High power gain • Gold metallization ensures

BFR92P

Abstract: 011v1
Contextual Info: BFR92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

78145

Abstract: BFR92T SC75 BFT92T
Contextual Info: BFR92T NPN Silicon RF Transistor Preliminary data 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

E 94733

Abstract: BFT92T
Contextual Info: BFR92T NPN Silicon RF Transistor Preliminary data 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR92AF

Contextual Info: BFR92AF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BRF92A

Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features RF Wideband Amplifier/Oscillator 5G H z Transition Frequency Low Intermodulation Distortion High Power Gain SOT-23 Low Noise TOP VIEW Mechanical Data_ nr B C A Case: SO T-23, Molded Plastic Leads/Terminals: Solderable per M IL-STD-202,

SOT-490

Abstract: BFR92AF
Contextual Info: BFR92AF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: BFR92A NPN 5 GHz wideband transistor Rev. 04 — 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

Contextual Info: BFR92AW Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)25m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: BFR92AR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MAR 745 TRANSISTOR

Abstract: marking code 10 sot23 BFR92A BFR92AT SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR92AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT FEATURES DESCRIPTION • High power gain

BRF92

Abstract: BRF92A
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR POWER SEMICONDUCTOR Features • • • • • RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data • • • • • C E

BCR108W

Abstract: BFR92W E6327 VSO05561
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

brf92

Abstract: BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,