BFR92A Search Results

BFR92AR

Abstract: 706 TRANSISTOR sot-23 720 SOT23-3 BFR92A BFR92AGELB-GS08 BFR92ARGELB-GS08 BFR92AW BFR92AW-GS08 339 SOT23-3
Contextual Info: BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

CD074

Contextual Info: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base

Contextual Info: MOTOROLA Order this document by BFR92ALT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors BFR92ALT1 Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface

BFR92A

Abstract: BFR92AW
Contextual Info: bbSB'm P hilips Sem iconductors — ÜD2517M 31fl • APX N AMER HER PHILIPS/DISCRETE Prelim inary specification D— — ü ï i i — ■ ■ b7E b? NPN 5 GHz wideband transistor FEATURES BFR92AW PINNING • High power gain • Gold metallization ensures

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

BFR92AF

Contextual Info: BFR92AF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BRF92A

Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features RF Wideband Amplifier/Oscillator 5G H z Transition Frequency Low Intermodulation Distortion High Power Gain SOT-23 Low Noise TOP VIEW Mechanical Data_ nr B C A Case: SO T-23, Molded Plastic Leads/Terminals: Solderable per M IL-STD-202,

SOT-490

Abstract: BFR92AF
Contextual Info: BFR92AF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: BFR92A NPN 5 GHz wideband transistor Rev. 04 — 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

Contextual Info: BFR92AW Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)25m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: BFR92AR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MAR 745 TRANSISTOR

Abstract: marking code 10 sot23 BFR92A BFR92AT SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR92AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT FEATURES DESCRIPTION • High power gain

BRF92

Abstract: BRF92A
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR POWER SEMICONDUCTOR Features • • • • • RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data • • • • • C E

IC A1302

Contextual Info: BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

Contextual Info: • Philips Semiconductors ^ 5 3 ^ 3 1 QDB5174 31A APX Preliminary specification b?E I> N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES BFR92AW PINNING PIN DESCRIPTION • High power gain • Gold metallization ensures excellent reliability

Contextual Info: bbS3R31 DD3SE1S 166 M A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor X3A-BFR90A crystal N APER PHILIPS/DISCRETE bRE D — MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR90A SOT37 , BFQ53 (TO-72) and BFR92A (SOT23). Crystals are supplied as whole

BFR92AW

Contextual Info: BFR92AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 13 652 2 13 570 3 Marking: WP2

Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR POWER SEMICONDUCTOR Features • • • • • RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data • • • • • C E

BFR92A

Abstract: bft92 die transistor P2P marking code P2p SOT23 BFR90A BFT92 TRANSISTOR FQ
Contextual Info: DISCRETE SEMICONDUCTORS BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistor

Contextual Info: BFR92AF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFR90A

Abstract: BFR92A BFT92 A18 transistor
Contextual Info: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;

DIN 1415-1

Abstract: philips for ic 7404 transistor gl 1117 433-2 npn transistor c 4106 017 545 71 32 02 702 TRANSISTOR npn BFR90A BFR92A BFT92
Contextual Info: • Philips Semiconductors bbS3T31 □DSSlS'l 001 H A P X N AUER PHILIPS/DISCRETE Product specification b7E D NPN 5 GHz wideband transistor FEATURES £= BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion