MMBFU310 Search Results

shock vk200

Abstract: marking c7 sot-23 MMBFU310LT1
Contextual Info: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc

Contextual Info: MMBFU310L Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)150p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBFU310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)150p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

sot-23 marking 6C

Abstract: transistor y21 sot-23
Contextual Info: ON Semiconductort JFET Transistor MMBFU310LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB

Transistor J310

Contextual Info: MMBFU310LT1* M AXIM UM RATINGS Rating Symbol Value Unit D r a in -S o u rc e V o lta g e V DS 25 V dc G a te -S o u rc e V o lta g e V GS 25 V dc 'G 10 m Adc Symbol Max Unit PD 225 mW 1.8 m W aC r wJ A 556 °C W T j- T stg - 55 to + 150 CC G a te C u rre n t

42t sot-23

Abstract: marking 42t Sot-23 MARKING 2T2 42t SOT23 MMBFU310LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T T ra n s is to r MMBFU310LT1 N-Channel 2 SOURCE Motorola Preferred Device 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit D ra in -S o u rc e Voltage V DS 25 Vdc G a te -S o u rc e Voltage Vg s 25 Vdc 'g 10 m A dc

Contextual Info: MMBFU310LT1* M A XIM U M RATINGS Rating Symbol Value Unit Drain-Source Voltage V os 25 Vdc Gate-Source Voltage V GS 25 Vdc *G 10 mAdc Sym bol Max Unit PD 225 mW 1.8 mW/°C r o ja 556 °C/W Tj. Tstfl - 5 5 to +150 Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB

MMBFU310LT1

Abstract: MMBFU310LT1G
Contextual Info: MMBFU310LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current

Contextual Info: MMBFU310LT1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)150p @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)2.5

Contextual Info: MOTORCLA SC XSTRS/R F 15E D | b3b?aS4 0001,772 b | T -'ÎÏÎ-'X Ç M A X I M U M R A T IN G S Sym bol Value Untt Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 m Adc Rating Gate Current MMBFU310L CASE 318-03, STYLE 10 SOT-23 TO-236AB

MMBFU310LT1

Abstract: SOT-23 6C
Contextual Info: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

Contextual Info: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

motorola JFET 2N3819

Abstract: Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol

MMBFU310LT1G

Abstract: MMBFU310
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

motorola U310

Abstract: shock vk200 vk200 choke MMBFU310LT1 MVM010W U310 transistor u310 marking C3 sot-23 variable trimmer bar SOT-23
Contextual Info: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage

FU310

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET T ransistor MMBFU310LT1 N-Channel 2 SOURCE Motorola Preferred Device MAXIMUM RATINGS Rating 1 Symbol Value Unit D ra in -S o u rc e Voltage V DS 25 V dc G a te -S o u rc e Voltage Vg s 25 Vdc 'g 10 m A dc Symbol M ax

VK200 rfc

Abstract: MMBFU310LT1 transistor y21 sot-23 vk200 rfc with 6 turns MVM010W U310 shock vk200
Contextual Info: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the