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    MBT2222 Search Results

    MBT2222 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBT2222
    Unknown Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS Original PDF 40.55KB 1
    MBT2222A
    Unknown Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS Original PDF 40.56KB 1
    MBT2222ADW
    Weitron Dual General Purpose Transistors Original PDF 376.17KB 6
    MBT2222ADW1T1
    On Semiconductor General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original PDF 159.96KB 6
    MBT2222ADW1T1
    On Semiconductor General Purpose Transistor Original PDF 93.25KB 8
    MBT2222ADW1T1
    On Semiconductor General Purpose Transistor Original PDF 91.08KB 8
    MBT2222ADW1T1-D
    On Semiconductor General Purpose Transistor NPN Silicon Original PDF 91.08KB 8
    MBT2222ADW1T1G
    On Semiconductor TRANS GP BJT NPN 40V 0.6A 6SOT-363 T/R Original PDF 100.73KB 6
    badge MMBT2222A
    Microdiode Semiconductor (MDD) Small Signal Bipolar Transistor Original PDF
    SF Impression Pixel

    MBT2222 Price and Stock

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    onsemi MBT2222ADW1T1G

    Trans GP BJT NPN 40V 0.6A 150mW 6-Pin SC-88 T/R
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    Verical MBT2222ADW1T1G 81,000 3,000
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    Arrow Electronics MBT2222ADW1T1G Cut Strips 6 72 Weeks 1
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    RS MBT2222ADW1T1G Bulk 200
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    Onlinecomponents.com MBT2222ADW1T1G 81,000
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    Quest Components () MBT2222ADW1T1G 664
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    MBT2222ADW1T1G 664
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    MBT2222ADW1T1G 288
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    MBT2222ADW1T1G 288
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    Master Electronics MBT2222ADW1T1G 81,000
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    onsemi MBT2222ADW1T

    MBT2222ADW1T
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    Verical MBT2222ADW1T 15,400 13,275
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    Diodes Incorporated MMBT2222A-7-F

    Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222A-7-F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MMBT2222A-7-F Tape & Reel 3,756,000 3,000
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    Newark () MMBT2222A-7-F Cut Tape 1,180,721 1
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    MMBT2222A-7-F Tape & Reel 1,180,721 100
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    MMBT2222A-7-F Tape & Reel 48,000 3,000
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    Chip 1 Exchange MMBT2222A-7-F 3,000
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    Avnet Silica MMBT2222A-7-F 46 Weeks 3,000
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    Component Electronics, Inc MMBT2222A-7-F 10,996
    • 1 $0.65
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    Win Source Electronics MMBT2222A-7-F 573,000
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    onsemi MMBT2222ALT3G

    Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222ALT3G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MMBT2222ALT3G Tape & Reel 1,440,000 10,000
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    Newark () MMBT2222ALT3G Cut Tape 12,751 1
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    MMBT2222ALT3G Tape & Reel 12,751 10
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    Avnet Asia MMBT2222ALT3G 52 Weeks 80,000
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    Avnet Silica MMBT2222ALT3G 40,000 53 Weeks 10,000
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    EBV Elektronik MMBT2222ALT3G 220,000 53 Weeks 10,000
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    Master Electronics MMBT2222ALT3G 470,000
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    Win Source Electronics MMBT2222ALT3G 938,380
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    onsemi MMBT2222LT1G

    - Tape and Reel (Alt: MMBT2222LT1G)
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    Avnet Americas MMBT2222LT1G Tape & Reel 786,000 3,000
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    Avnet Silica MMBT2222LT1G 3,000 53 Weeks 3,000
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    EBV Elektronik MMBT2222LT1G 45,000 53 Weeks 3,000
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    Flip Electronics MMBT2222LT1G 12,000
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    Master Electronics MMBT2222LT1G 42,000
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    MBT2222 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N914

    Abstract: MBT2222ADW1T1 MBT2222ADW1T1G MBT2222
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V 3 • Pb−Free Package is Available Symbol Value Unit Collector−Emitter Voltage


    Original
    mbt2222adw1t1mbt2222adw1t1/d1n914mbt2222adw1t1g+1mbt2222 PDF

    BT2222A

    Abstract: MMBT2222ALT1 1P BT2222
    Contextual Info: M AXIMUM RATINGS Symbol M MBT2222 MBT2222A Unit C o lle c to r -E m itte r V o lta g e Rating V CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 C o lle c to r C u rre n t — C o n tin u o u s 6.0


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    mbt2222mmbt2222ammbt2222lt1mmbt2222alt1+6ot-23o-236abmbt2222abt2222ammbt2222alt1 1pbt2222 PDF

    MARKING 318 SC70-6

    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original
    mbt2222adw1t1sc-88/sc70-6/sot-363marking 318 sc70-6 PDF

    MBT2222ADW1T1

    Abstract: 1N914
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model – 4 kV ESD Rating: Machine Model – 400 V http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage


    Original
    mbt2222adw1t1r14525mbt2222adw1t1/d1n914 PDF

    sot363 3ft

    Abstract: 3Ft SOT363 1N914 MBT2222ADW 3Ft sot
    Contextual Info: MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 2 3 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 NPN+NPN VCEO (1) Value 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint


    Original
    mbt2222adwot-363sc-88150madc+4sot363 3ft3ft sot3631n9143ft sot PDF

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Contextual Info: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


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    sc-88ot-363419b-02ot-563+763a-01so-16751b-05dual transistors" pnp npnbc847cpdw1t1dual pnpbc858cdw1t1 PDF

    1N914

    Abstract: MBT2222ADW1T1
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original
    mbt2222adw1t1sc-88/sc70-tmbt2222adw1t1/d1n914 PDF

    marking 1b

    Abstract: MBT2222 MBT2222A 1985_MBT2222A
    Contextual Info: MBT2222 MBT2222A MBT222/MBT222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS 1 3 ABSOLUTE MAXIMUM RATINGS 2 Descriptions Symbol Tstg Tj Ptot VCBO VCEO VEBO IC Storage Temperature Junction Temperature Maximum Power Dissipation Ta=25 C Maximum Collector to Base Voltage


    Original
    mbt2222mbt2222ambt222/mbt222ambt222+3mbt222amarking 1b1985_mbt2222a PDF

    Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original
    mbt2222adw1t1gmbt2222adw1t1/d PDF

    1N914

    Abstract: 419B-02 MBT2222ADW1T1 MBT2222ADW1T1G on semiconductor marking code 1P
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Features •ăMoisture Sensitivity Level: 1 •ăPb-Free Package is Available http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage


    Original
    mbt2222adw1t1mbt2222adw1t1/d1n914419b-02+2mbt2222adw1t1gon semiconductor marking code 1p PDF

    Contextual Info: MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http://onsemi.com Features • Moisture Sensitivity Level: 1 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original
    mbt2222adw1nsvbt2222adw1aec-q101sc-88/sc70-6/sot-363+1mbt2222adw1t1/d PDF

    1N914

    Abstract: MBT2222ADW1T1G
    Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original
    mbt2222adw1t1gmbt2222adw1t1/d1n914 PDF

    sot363 3ft

    Abstract: 1N914 MBT2222ADW 3Ft SOT363 3Ft sot
    Contextual Info: MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 2 3 1 * “G” Lead Pb -Free 6 5 1 4 5 6 2 4 3 SOT-363(SC-88) NPN+NPN VCEO (1) Value 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint


    Original
    mbt2222adwot-363sc-88150madc+4sot363 3ft1n9143ft sot3633ft sot PDF

    FR4 epoxy dielectric constant 4.4

    Abstract: e/AT-33225-BLK
    Contextual Info: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency


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    at-33225ot-223at-33225965-5910e+344475a4fr4 epoxy dielectric constant 4.4e/at-33225-blk PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    sg388/dmay-2002r14525sg388+10mps2112uc3842 smps design with tl431mps2111dc motor speed control tl494transistor mps2112ic equivalent book ncp1203mosfet triggering circuit using tl494smps with uc3842 and tl431sg3526tip122 tip127 mosfet audio amp PDF

    T2222A

    Abstract: BT2222ALT1 BT2222
    Contextual Info: MAXIMUM RATINGS Symbol MBT2222 MBT2222A Unit C o lle ctor-E m itter Voltage VCEO 30 40 Vdc C ollector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 Rating C o lle ctor C u rrent — C o ntinuous Vdc 6,0 600 C MBT2222LT1 MBT2222ALT1* m A dc


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    mmbt2222mmbt2222ammbt2222lt1mmbt2222alt1+5ot-23ito-236abt2222abt2222alt1bt2222 PDF

    Contextual Info: Thlïï H EW L E T T K KÆPA CK A R D 4.8 V NPN Common Em itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 |isec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package


    OCR Scan
    at-36408 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    cy8c38cy8c29incl79512t9797+1612t980412t980312t980012t980212t980112t9805arduino mega256013001 s 6d transistorarduino uno rev 3agilent optical encoder 9988mz 13001 transistorarduino mega 2650skiip 613 gb 123 ctarduino sound sensor module picarduino nanomc34063l PDF

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    1ss383t12n38192n39032n3904+162n39062n44012n44032n50872n50882n5089bc237bc847bpdw1t1 seriesbc548low noise transistors bc638cbc550cbc3072n5550* surface mountbc212bsr58lt1nsdemn11xv6t1 PDF

    MBT2222 equivalent

    Abstract: MARKING M1B
    Contextual Info: WILLAS FM120-M+ THRU MBT2222 A LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers


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    fm120-mmmbt2222fm1200-mod-123+8od-123hfm150-mhfm160-mhfm180-mhfm1100-mhfm1150-mhmbt2222 equivalentmarking m1b PDF

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


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    ot323bc818wmun5131t1bc846a+12smbt3904mvn5131t1transistor smd s72nec mys 501mys 99transistor 8bb smdst mys 99 102kvp 81akvp 81a diodekvp 69akvp 86asmd transistor a7p PDF

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Contextual Info: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


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    sgd501/d74vcx16373dt74vcx16373dtr74vcx16374dt+1416bit74vcx16374dtr80sq045n80sq045nrl1500w audio amplifier circuitschottky diode 80v 6a1500w pwm 220vc106mgmarking code ss sot23tl494cn inverter datasheetsmps 1500wmmsz5231bt1gdc 220v motor speed control circuit with scrncp1200p60g PDF

    BT2222A

    Abstract: MMBT2222 BT2222AT transistor 2222a MMBT2222A MBT2222
    Contextual Info: MOTOROLA 6367254 SC iXSTRS/R M OT O RO L A SC F> Tt CXSTRS/R I DE | ta3ti72S t4 0 0 f l S 0 3 5 F 96D 8 2 0 3 2 M A X IM U M RATINGS MBT2222 MBT2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage


    OCR Scan
    ta3ti72smmbt2222mmbt2222abt2222a+3bt2222attransistor 2222ambt2222 PDF

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


    OCR Scan
    at-31625ot-2235965-5911efzh 161+9fzh 111fzh 181transistor i 17-13 0773cbc 184 transistorfzh 175s3230fzh 165fzh 165 bfzh 171 PDF