150MADC Search Results

BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139 application

Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

bd139

Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139 N

Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
Contextual Info: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139 N

Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

bd139

Abstract: BD135-BD137-BD139 bd137 BD139 N BD139 p bd135 N BD139-25
Contextual Info: MCC BD135 BD137 BD139
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139 application

Abstract: BD139 N BD139 BD139 p of bd139 bd135 N BD136
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

Contextual Info: 1. M echanical D im ensions: 2 . S ch em atic: o- 2 .0 ±0.2 o- -I k 3. E lectrical S p ecification s: 0 .4 ,4±0.1 OCL: 12uH ±5% @2.52MHz 1.0V Q: 25 Min @2.52MHz SRF: 30MHz Min DCR: 3.80 Ohms Max □C Current: 150mAdc Max _L NotBs: LO 1. Soldcrabllityr Leads shall m eet MIL—STD—202G,

Contextual Info: LED-CONVERTER UNIT PS-LD0401-x-yyy S (22W) (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED-Converter is developed for max. 4 LED-lines APPLICABLE: 4 LED lines (Serial Mode) Pout max 5,5 Watt per line, total max. 22W LED Voltage max. 51Vdc Lamp Current per line: max. 150mAdc

RLXF262-331

Abstract: 330uH
Contextual Info: 1. M echan ical Dim ensions: 2 . S c h e m a tic : 3. E l e c t r i c a l S p ecificatio n s: OCL: 3 3 0uH ± 10% @796KHz, 1.0V Rated Current: — I 5.0±.5 I— 150mAdc Based on 10% drop in OCL DCR: 4.0 Ohms Maximum Q: 60 Min @ 796KH z SRF: 3.8MHz Min,

Contextual Info: 2 . S ch em atic: 1. D im ensions: 2 .5 ± .2 o- o3 .2 ± .3 1.9±.1 3. E lectrical Specs: OCL: 10uH ±10% @2.52MHz, 1V Q: 30 Min 2.52MHz 2.0 SRF: 33MHz Min DC Res.: 2.1 Ohms Max DC Current: 150mAdc Max Notes: 1 . Solderabllity: Leads shall meet MIL— STD— 202G,

BD139

Abstract: BD139 application BD135-BD137-BD139
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

2N2907 application notes

Abstract: 2N2907 a TRANSISTOR
Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

bav99

Abstract: smd diode marking jc sot23
Contextual Info: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

125OC

Abstract: MMBT2907LT1
Contextual Info: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range

CU16025ECPB-u5j

Abstract: CU16025ECPB-W6J Noritake Itron CU16025ECPB-U5J CU16025 CU16025ECPB
Contextual Info: OBSOLETE DESIGN - See Replacement CU16025ECPB-W6J 5X7 Dot Character VFD Module ! ! ! ! ! ! ! ! ! 2 X 16 Characters 5mm High LCD Compatible Design Operating Temp -20°°C to +70°°C Single 5V Supply with Power Save Mode High Brightness Blue Green Display Selectable 4/8 bit M68/i80 Interface

Contextual Info: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

DUAL OptoMOS Relay

Abstract: NJ 25 50 N BS7002 PAA110 PAA110L PAA110LS PAA110LSTR PAA110PL PAA110PLTR
Contextual Info: PAA110L DUAL POLE OptoMOS Relay Load Voltage Load Current Max RON PAA110L 400 150 22 Description PAA110 is a 400V, 150mA, 22Ω 2-Form-A relay. This performance leader provides high peak load voltage handling capability and improved peak load current handling.

2907 TRANSISTOR PNP

Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration

SBT2222F

Abstract: SBT2907F IC600
Contextual Info: SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information