2N3250 Search Results

250M

Abstract: 2N3250A
Contextual Info: 2N3250A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

250M

Abstract: 2N3250X
Contextual Info: 2N3250X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3261

Abstract: 2N3261A 2N3251A 2n3250A 2n3251
Contextual Info: 2N3250, A 2N3251, A MAXIMUM RATINGS Sym bol Rating Collector-Emltter Voltage 2N32E0 2N3250A 2N3251 2N3251A V C EO 40 Collector-Base Voltage V cB O 50 Emlt1er»Bass Voltage vebo Vdc 60 Vdc 5.0 Vdc Collector Current ic 200 m Adc Total Device Dissipation @ T^ = 25°C

2N3250CSM

Contextual Info: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

250M

Abstract: 2N3250DCSM
Contextual Info: 2N3250DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

MPQ3906

Abstract: 106V 2n3250 bsc 2N3906 die 2N3250 2N3905 2N3906 2n3906 equivalent transistor MPQ3906 equivalent
Contextual Info: MPQ3906 SILICON QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER/SWITCH TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON AMPLIFIER/SWITCH TRANSISTOR . .designed for low current amplifier and switching applications. Transistors Similar to 2N3905, 2N3906, 2N3250 Low CoHector-Emitter Saturation Voltage —

New England Semiconductor

Abstract: transistor D 1666 2N3250
Contextual Info: 0 /V E F ^ IP 2N3250 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH VOLTAGE • HIGH FREQUENCY • HIGH CURRENT GAIN PNP GENERAL PURPOSE TRANSISTOR 1 E m itter TO-18 M A X IM U M R A T IN G S RATINGS SYMBOL 2N3250 UNITS VcEO -40 V dc

250M

Abstract: 2N3250XCSM
Contextual Info: 2N3250XCSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

TO-18 amps pnp transistor

Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
Contextual Info: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A 2N3250A JAN2N3251A 2N3250A JANTX2N3251A 2N3250 JANTXV2N3251

Contextual Info: TYPES 2N3250, 2N3250A, 2N3251. 2N3251A P-N-P SILICON TRANSISTORS B U LL E T IN N O . D L -S 6 7 9 6 5 0 , M A R C H 1967 DESIGNED FOR LOW-POWER SATURATED-SWITCHING AND AMPLIFIER APPLICATIONS • Low-Level hFE: 80 Min at 100 /¿A 2N3251 and 2N3251A ‘ m echanical d a ta

Contextual Info: 3DE D a» • 7cîBc]237 00311b7 ü ■ ^p37' 5 SCS-THOM SON iUHETTBOHOeS 2N3250 2N3251 S G S-THOMSON AMPLIFIERS AND SWITCHES DESC RIPTIO N - T h e 2 N 3 2 5 0 and 2N 32 51 are silicon planar epitaxial P N P transistors in Jedec T O -1 8 m etal case. T h ey

2N3251

Abstract: 2N3250 251A
Contextual Info: 2N3250 2N3251,A* M A X IM U M RATINGS Sym bol 2N3250 2N3251 2N 3 25 1A U n it C o lle cto r-E m itte r V olta g e V C EO -4 0 -6 0 Vdc C o lle cto r-B a se V olta g e VCBO -5 0 -6 0 Vdc E m itter-B ase V o lta g e Vebo - 5 .0 Vdc C o lle c to r Current fC

2N328A

Contextual Info: ENTRAL bl SEMICONDUCTOR □□□□SSI D S r T -3 7 -a i PIMP M ETA L CAN - S A TU R A TED SWITCH Cont'd. TYPE Vc b VCE V eb hFE at •c VCE NO. V V V min ma mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30

2N3251

Abstract: 2N3250A 2N3250 2N3251A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N3250, A 2N3251, A TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2n3251

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS

2N3251A

Abstract: 2N3250A 2N3251AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3250AUB 2N3251A 2N3251AUB

2n3251

Contextual Info: 2N3250 2N3251,A* M A X IM U M RA TIN G S Symbol 2N3250 2N3251 2N3251A Unit C o lle c to r -E m it t e r V o lt a g e VCEO -4 0 -6 0 Vdc C o lle c t o r -B a s e V o lt a g e VCBO -5 0 -6 0 Vdc E m it te r - B a se V o lt a g e Vebo -5 .0 Vdc fc -2 0 0 m Adc

Contextual Info: L.1 ENTRAL SEMICONDUCTOR D I ITflTibB □□□□SSI S PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE >C fT C0b *on to ff V V V min ma mA V V mA MHz pF nS nS mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index