2N4261 Search Results

2N4261

Abstract: 2N4261UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV

Contextual Info: ^s.m.i-Condimto'i 'Lpioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4261 Polarity PNP Features: • • Fast switching small signal silicon transistor. Housed in a TO-72 case.

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

2N4261

Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
Contextual Info: 2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J • JANTX level (2N4261JX)

Contextual Info: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the

2N4261

Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
Contextual Info: 2N4261 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J

Contextual Info: 2N4261+JANTX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10

2N4260

Abstract: 2N4261
Contextual Info: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)

2N4261

Contextual Info: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors

Contextual Info: 2N4261+JANTXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10

Contextual Info: 2N4261 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. D a ta S h e e t No. 2N 4261 m 1 1 IIr ^888o88% #f 1 l $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N4261 Type 2N4261 G eom etry 0014 Polarity PNP Qual Level: J A N -J A N S

2n4261

Abstract: 2N426 M1515
Contextual Info: 2N 4261 Transistor by SEMICOA Semiconductors http://semicoa.com/transist/2n426 i .htm a semicoR SEMICONDUCTORS 2N4261 Transistor Case: TO-72 Qual Level: JAN - JANS Chip Geometry: 0014 Polarity: PNP The 2N4261 is a fast-switching, small signal silicon transistor.

2N4261

Abstract: 2N4261JS
Contextual Info: 2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J

2N4261

Contextual Info: 2N4261 Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261 small signal transistor comes in a hermetically sealed metal TO-72 package and is military qualified for high-reliability applications. It is also available in a low-profile UB

2N4261

Abstract: 2N4261 JAN
Contextual Info: Data Sheet No. 2N4261 Generic Part Number: 2N4261 Type 2N4261 Geometry 0014 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/511 Features: • • • • • Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using

Contextual Info: 2N4261+JAN Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10

2N4261UB

Abstract: 2N4261UBJ 2N4261UBJS 2N4261UBJX JANTXV 2N4261UB 2N4261UBJV
Contextual Info: 2N4261UB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261UBJ

2N4260

Abstract: 2N4261 2C4261 2N4260UB 2N4261UB SD4261 SD4261F SQ4261 SQ4261F chip type geometry Semicoa
Contextual Info: Data Sheet No. 2C4261 Generic Packaged Parts: Chip Type 2C4261 Geometry 0014 Polarity PNP 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for low voltage, low gain RF

Contextual Info: 2N4261 PNP SILICON HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: The ASI 2N4261 is Designed for General Purpose High Speed Switching Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC 30 mA VCE -15 V PDISS 200 mW @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C

2N4261UB

Abstract: 2N4261UBJ 2N4261UBJS 2N4261UBJX 2N4261UBJV
Contextual Info: 2N4261UB Silicon PNP Transistor D a ta S h e e t Description Applications SEMICOA offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261UBJ

2N4261

Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
Contextual Info: 2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J • JANTX level (2N4261JX)

2N4261

Contextual Info: SEM ICONDUCTOR T ECH N ICAL DATA 2N4261 JA N , JTX, JTXV Pro cessed per MIL-S-19500 511 PNP S ilicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 RonkonKoma. N.Y. 11779 d e s ^ n e d tot g e n e ra l p u r p o s o sw rte h ffg a p p lic a tio n s

Contextual Info: 2N4261+JANS Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10