2N426 Search Results
2N426 Datasheets (125)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N426 | Germanium Power Devices | Germanium PNP Mesa Transistors | Scan | 351.3KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 70.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 35.09KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 82.99KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | GE Transistor Specifications | Scan | 37.41KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 143.58KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 155.67KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 106.46KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 95.84KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Vintage Transistor Datasheets | Scan | 52.77KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.05KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Semitron | Alloy Junction Germanium Transistor | Scan | 378.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N426 | Semitronics | Alloy-Junction Germanium Transistors | Scan | 270.79KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Semico | Chip Type 2C4261 Geometry 0014 Polarity PNP - Pol=PNP / Pkg=TO72 / Vceo=15 / Ic=30m / Hfe=25min / fT(Hz)=.6G / Pwr(W)=0.2 | Original | 28.03KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 207.28KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Motorola | The European Selection Data Book 1976 | Scan | 51.59KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 35.09KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 54.29KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 86.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4260 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 62.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N426 Price and Stock
Central Semiconductor Corp 2N4264 TRE PBFREETransistor GP BJT NPN 15V 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N4264 TRE PBFREE) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
2N4264 TRE PBFREE | Tape & Reel | 4,000 |
|
Get Quote | ||||||
Central Semiconductor Corp 2N4264 TRE TIN/LEADTransistor GP BJT NPN 15V 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N4264 TRE TIN/LEAD) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
2N4264 TRE TIN/LEAD | Tape & Reel | 4,000 |
|
Get Quote | ||||||
Semicoa Semiconductors JAN2N4261UB- Waffle Pack (Alt: JAN2N4261UB) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
JAN2N4261UB | Waffle Pack | 500 |
|
Get Quote | ||||||
Semicoa Semiconductors JANS2N4261UB- Waffle Pack (Alt: JANS2N4261UB) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
JANS2N4261UB | Waffle Pack | 50 |
|
Get Quote | ||||||
Semicoa Semiconductors JANSR2N4261UB- Waffle Pack (Alt: JANSR2N4261UB) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
JANSR2N4261UB | Waffle Pack | 50 |
|
Get Quote | ||||||
2N426 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N4261
Abstract: 2N4261UB
|
Original |
mil-prf-19500/5112n42612n4261ubt4-lds-0150 | |
|
Contextual Info: 2N4262 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) |
Original |
2n4262freq900m | |
|
Contextual Info: ^s.m.i-Condimto'i 'Lpioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4261 Polarity PNP Features: • • Fast switching small signal silicon transistor. Housed in a TO-72 case. |
Original |
2n4261-65to | |
N2369
Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
|
OCR Scan |
2n7062n7082n914n2368+9 | |
2N4261
Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
|
Original |
2n4261mil-prf-195002n4261j2n4261jx+4 | |
|
Contextual Info: 2N4269S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products |
Original |
2n4269so206aa10/10m16-jul-02 | |
|
Contextual Info: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the |
Original |
2n4261ubmil-prf-19500/5112n4261t4-lds-0150-1 | |
2N4265
Abstract: 2N4264 QS 100 NPN Transistor
|
OCR Scan |
2n42642n4265o-226aa2n426s+1 | |
2N4261
Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
|
Original |
2n4261mil-prf-195002n4261j2n4261jx+4 | |
|
Contextual Info: 2N4261+JANTX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10 |
Original |
2n4261 | |
2N4260
Abstract: 2N4261
|
OCR Scan |
2n42602n4261 | |
2N4265
Abstract: 2904S
|
OCR Scan |
2n42642n4265o-226aa010332b+1 | |
2n4269Contextual Info: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products |
Original |
2n4269o206aa10/10m16-jul-02 | |
|
Contextual Info: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products |
Original |
2n4269o206aa10/10m19-jun-02 | |
|
|
|||
2N4261Contextual Info: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors |
Original |
2n4261com/2n4261 | |
nkt270
Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
|
Original |
2n4132n413a2n8092n810+15 | |
diode bsy28
Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
|
Original |
bsy17bsy18en7442n3985+13 | |
2n426
Abstract: 2N4264 2n4265
|
OCR Scan |
2n42642n4265n4265o-226aa+1 | |
to18 package
Abstract: 1455 JANTXV equivalent Shortform Transistor 2N4269S
|
Original |
2n4269so206aa10/10m2-aug-02+4 | |
|
Contextual Info: 2N4267 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)25 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) |
Original |
2n4267 | |
|
Contextual Info: 2N426 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)4.0u @V(CBO) (V) (Test Condition)1.5 h(FE) Min. Current gain.30 h(FE) Max. Current gain.60 |
Original |
2n426 | |
|
Contextual Info: 2N4261+JANTXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10 |
Original |
2n4261 | |
|
Contextual Info: 2N4264 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)135þ I(CBO) Max. (A).1uØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain. |
Original |
2n4264freq300m | |
|
Contextual Info: 2N4261 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10 |
Original |
2n4261 | |