2N413 Search Results

2N4136

Abstract: 2N2432
Contextual Info: M ILITA R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 •2N2432A 2N4136 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS GEOMETRY 485 M. E L E C T R IC A L D A T A J m i {A B SO LU T E M AXIM U M R A T IN G S ! P AR AM ETE R SYM BO L 2N2432/4138 2N2432A

2N3933

Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

2N2432A

Abstract: 2n4138 2N243
Contextual Info: TYPES 2*2432, 2N2432A, 2N4138 N-P-N SILICON TRANSISTORS BU LL ET IN NO. DL-S 6S9079, OCTOBER 1 9 6 6 -R E V lS E D JA N U A R Y 1968 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . . 0.4 mV Max 2N2432A • low Iecs. . . 2 nA Max

nkt270

Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
Contextual Info: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385

IC LA 4138

Abstract: 2n343
Contextual Info: M IL IT A R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 •2N2432A S ILIC O N E P IT A X IA L JU N C TIO N NPN SW ITCH IN G T R A N S IS T O R S 2N4138 •AVAILABLE AS JAN. JAN-TX. JAN-TXV. JAN-S GEOMETRY 485 E L E C T R IC A L D A T A IA 8 S O I.U T I M A X IM U M M A T IN G S

2N2432A

Abstract: JAN-2N2432A 2N2432 2N4138 JAN-2N2432
Contextual Info: M I L IT A R Y APPROVED LOW LEVEL - HIGH SPEED JAN-2N2432 JAN-2N2432A 2N4138 SILICON EP ITA XIAL JUNCTION NPN SWITCHING TRANSISTORS A V A IL A B L E AS JA N -T X AND J A N -T X -V GEOMETRY 41, PG. 57 ELECTRICAL D A TA ABSOLUTE M AXIM UM RATINGS PARAM ETER

2N2101

Abstract: 2N3713 2N4130 2N5632 t031
Contextual Info: industrial power transistors 134 SILICON NPN •TRANSISTORS 1 0 Amp TYPE NUMBER CASE SIZE 2N2101 2N3713 2N3714 2N3715 2N3716 2N4130 2N5632 2N5633 2N5634 80T7711 80T7712 80T7713 80T7714 80T7715 80T7716 SOT7731 80T7732 80T7733 80T7734 80T7735 80T7736 80T7741

BF167

Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

to48c

Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
Contextual Info: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 ‘ 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA

2n2432a

Abstract: 2n2432
Contextual Info: TYPES 2N2432, 2N2432A. ü4 « N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 8 9 0 7 9 , O C T O B E R 1 9 6 6 - R E V I S E D J A N U A R Y 1 9 6 8 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . 0.4 mV Max 2N2432A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N2876

Abstract: 2n3375 CE 65 M 2n3632 2N4132 TO-37 SPACE POWER ELECTRONICS
Contextual Info: 8440355 SPACE SPACE POWER POWER 89C ELECTRONICS ELECTRONICS 7T RF P O W E R - 2 8 VOLT D 7~-33-o/ 00119 DE~|fi44D3SS D D D D i n • 424 "7437 • ASN <«14 .437 • 046 • 356 7T50" • 375 7455 • 1658 Rated Breakdown Voltages TYPE CASE 2N2876 2N3632

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

2N5057

Abstract: JAN2N706A 2n5456
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

2N4303

Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60

2N859

Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

2SK117BL

Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F)
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m