2N243 Search Results

2n2432a

Abstract: 2n2432
Contextual Info: TYPES 2N2432, 2N2432A. ü4 « N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 8 9 0 7 9 , O C T O B E R 1 9 6 6 - R E V I S E D J A N U A R Y 1 9 6 8 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . 0.4 mV Max 2N2432A

2n243

Abstract: 2N244 transistor all
Contextual Info: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.

2N2432 JANTXV

Abstract: 2N2432
Contextual Info: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2n2432

Contextual Info: TECHNICAL DATA 2N2432 JAN, JTX, JTXV 2N2432A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/313 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current

2N4136

Abstract: 2N2432
Contextual Info: M ILITA R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 •2N2432A 2N4136 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS GEOMETRY 485 M. E L E C T R IC A L D A T A J m i {A B SO LU T E M AXIM U M R A T IN G S ! P AR AM ETE R SYM BO L 2N2432/4138 2N2432A

Contextual Info: 2N2432+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m

2N2432A

Abstract: 2n4138 2N243
Contextual Info: TYPES 2*2432, 2N2432A, 2N4138 N-P-N SILICON TRANSISTORS BU LL ET IN NO. DL-S 6S9079, OCTOBER 1 9 6 6 -R E V lS E D JA N U A R Y 1968 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . . 0.4 mV Max 2N2432A • low Iecs. . . 2 nA Max

2N2432A

Contextual Info: 2N2432A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2N2432A

Contextual Info: TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/ 313 Devices Qualified Level JAN JANTX JANTXV 2N2432 2N2432A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation

Contextual Info: Web site: WWW.Crystalonics.com Phone: Fax: 631 585 4858 631- 981- 6140 ( - - ) * See price list for ordering information J ir v . 2N2432A LOW LEVEL - HIGH SPEED NPN SWITCHING TRANSISTORS • • • < •• • . • v> vJ ^ . . -’v^ - “ i\ • v •?*3<A

Contextual Info: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2N2432

Abstract: 2N2432A
Contextual Info: Back to Bipolar Small Signal TECHNICAL DATA 2N2432 JAN, JTX, JTXV 2N2432A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/313 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage

IC LA 4138

Abstract: 2n343
Contextual Info: M IL IT A R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 •2N2432A S ILIC O N E P IT A X IA L JU N C TIO N NPN SW ITCH IN G T R A N S IS T O R S 2N4138 •AVAILABLE AS JAN. JAN-TX. JAN-TXV. JAN-S GEOMETRY 485 E L E C T R IC A L D A T A IA 8 S O I.U T I M A X IM U M M A T IN G S

Contextual Info: 2N2432A+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m

Contextual Info: 2N2432+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m

Contextual Info: 2N2432A+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m

Contextual Info: 2N243 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A)60m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2433 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)75 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m

Contextual Info: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2N2430

Contextual Info: 2N2430 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32â V(BR)CBO (V)32 I(C) Max. (A)300m Absolute Max. Power Diss. (W)280m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.60 h(FE) Max. Current gain.210

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

Contextual Info: m 2N2432 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N2432 is Designed for Low Level High Speed Chopper Applications and is Used Inverted. lc 100 mA O m < MAXIMUM RATINGS 30 V P diss 600 mW @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C

2N2432A

Abstract: JAN-2N2432A 2N2432 2N4138 JAN-2N2432
Contextual Info: M I L IT A R Y APPROVED LOW LEVEL - HIGH SPEED JAN-2N2432 JAN-2N2432A 2N4138 SILICON EP ITA XIAL JUNCTION NPN SWITCHING TRANSISTORS A V A IL A B L E AS JA N -T X AND J A N -T X -V GEOMETRY 41, PG. 57 ELECTRICAL D A TA ABSOLUTE M AXIM UM RATINGS PARAM ETER