2N2896 Search Results

2n3547

Abstract: 2N3549
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton

Contextual Info:


 

 
  The 2N2896 is Designed for General Purpose Amplifier and Switching Applications. 
  MAXIMUM RATINGS

  
     
   
         

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO

Contextual Info: 2N2896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 90V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N2896

Abstract: 2N2895 motorola TO-18 dimensions
Contextual Info: MOTOROLA Order this document by 2N2896/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor 2N2896 COLLECTOR 3 LAST SHIP 21/03/00 NPN Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS 3 LIFETIME BUY Rating Symbol Value Unit Collector – Emitter Voltage VCEO 90

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO

JAN 2N2896

Abstract: 2N2896 2N2896 data sheet 120M
Contextual Info: 2N2896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 90V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)

2N2895

Abstract: 2n2896
Contextual Info: MAXIMUM RATINGS Rating Symbol 2NZ895 2N2896 v CEO 65 90 Vdc C o llector-E m itter Voltage VCER 80 140 Vdc Collector-Base Voltage v CBO 120 140 Vdc Em itter-Base Voltage v EBO 7.0 Vdc C ollector C urrent — C ontinuous 'C 1.0 Ade Total Device D issipation

Contextual Info: ^eml-donduckoi iPioaucti, Dna. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MECHANICAL DATA Dimensions in mm (inches) 2N2896 (0.230), T51 (0.209)' NPN SILICON TRANSISTOR 4.95 (0.195) 4.52(0.178)

transistor 559

Contextual Info: 2N2896CSM4 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)

2N2896

Contextual Info: M A X IM U M RATINGS Rating C o lle c to r -E m itte r V o lta g e Symbol 2N2895 2N2896 Unit VC E O 65 90 Vdc C o lle c to r -E m itte r V o lta g e VCER 80 140 Vdc C o lle c to r-B a s e V o lta g e v CBO 120 140 Vdc E m itte r-B a s e V o lta g e V e BO

2N3053 NPN transistor

Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

2N2897

Abstract: 2N2895 2N2896
Contextual Info: MOTOROLA SC XSTRS/R 12E F D I b3fc>7BS4 Q QÖt . 27 3 T | 2N2895'r’ 27''3 thru 2N2897 MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 2N2897 U nit VCEO 65 90 45 Vdc Coltector-Emitter Voltage Collector-Emitter Voltage VCER 80 140 60 Vdc Collector-Base Voltage

2N2896

Contextual Info: m 2N2896 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2896 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 90 V P d is s 0.5 W @ TA = 25 °C P d is s 1.8 W @ Tc = 25 °C V j -65 °C to +200 °C stg

2n2896

Contextual Info: 2N2896 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra. Page 1 of 2 Enter Your Part # Home Online Store Special Offers: 2N2896 Availability FREE UPS Ground Shipping on Orders above $150.00 Buy 2N2896 at our online store!

Contextual Info: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)

Contextual Info: 2N2896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 90V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N3546

Abstract: 2N3135 2N3241 2N3242 2N3550 2N3545
Contextual Info: Small Signal Transistors TO-18 Case Continued T Y P E N O. 2N2896 2N2897 2 N 2906A 2N 2907A 2N2952 D ESC R IPTIO N NPN AM PL/SWITCH NPN AMPUSWITCH hi =E BVC BO BVCEO BVEBO C BO VCBO (V ) (V ) (V ) (m A ) MIN MIN MIN MAX 'IC E S “ IC E V 140 90 7.0 .

2N2310

Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

BC109 MOTOROLA

Abstract: N3053 2N2219 MOTOROLA 2N3019 motorola 2n2484 complementary bc140 bcy59 motorola 2N2222A motorola BC107 2N1711 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty