2N2193 Search Results

Contextual Info: F 2N2193 NPN SILICON TRANSISTOR TO-39 2 N 2 1 93 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage

2N2193

Abstract: 002120
Contextual Info: IvKU 2N2193 NPN SILICON TRANSISTOR TO-39 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage

2N2193

Abstract: Q32J
Contextual Info: >S '«S \ S. r-' * * " S/^ > " \ 2N2193 f •* NPN iwi «Í.A SILICON \<VS ;>:"!^- ’S! fef •$ V iv f«Wr.* *^* t í - ¡S ' ,TV -\ ^ v x v y - ^ •>}* TRANSISTOR ¿í.>VÍ¿s'ÍiJ,rf.r TO-39 2N2193 is NPN silicon planar transistor designed for medium power switching and

Contextual Info: m 2N2193A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2193A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 1.0 A V ce 50 V V cb 80 V P diss 2.8 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. 2N2193 TO-39 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS

tt 2194

Abstract: 2N2193 2N2193A 2N2192 TEXAS INSTRUMENTS 2N2192 NS2N 2n2243
Contextual Info: TYPES 2N2192, 2N2192A. 2N2193. 2N2193A. 2N2194, 2N2194A, N-P-N SILICON TRANSISTORS B U L L E T IN • I NO. D L S 733571, M AR C H 1 9 6 3 -R E V IS E D M A R C H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S

2N2193

Abstract: n5010
Contextual Info: 2N2193 NPN silicon transistor 3.75 Transistors Transistors Bipolar Si N. 1 of 2 Home Part Number: 2N2193 Online Store 2N2193 Diodes NPN s ilic o n t rans is t o r Transistors Enter code INTER3 at checkout.*

2N2192

Abstract: 2N2193A 2N2193 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192
Contextual Info: 2N2192, A 2N2193, A NPN SILICON TRANSISTORS, EPITAXIAL TRANSISTORS NPN SILIC IU M , EP IT A X I A UX - LF large signal amplification i 40 V 2N 2192,A 1 50 V 2N 2193,A A m plification BF grands signaux V CEO * Medium current switching Commutation à moyen gourant

2n3019a

Contextual Info:


 

 
  The 2N2193A is Designed for General Purpose Amplifier and Switching Applications. 
  MAXIMUM RATINGS

 
  
     
         θ

transitron

Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

2N2193A

Contextual Info: 2N2193A Si NPN Lo-Pwr BJT 26.98 Transistors Transistors Bipolar Si. 1 of 2 Home Part Number: 2N2193A Online Store 2N2193A Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

BSY44

Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N2310

Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2N2049

Abstract: 2N1990 2N1987 2N1988 2N1989 2N2102 2N2192 2N2193 2N2194 2N2195
Contextual Info: metsd-Cati Paciàcie^l^yìstslofs iWIA » • • w W w t • • ^ W F I lM W iw “* ■ “ w iiW Maximum Ratings Type No. 2N1987 ^CBO ^CEO V (V) Min Min 50 W w V w w w * PD (W) Min Tc=25°c (V) 'cm (A) (A) tso ^CB (UA) 0(V) Max 'ces W vce »FE e Min

n4300

Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Contextual Info: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

bcy591x

Abstract: 2N6429A sot23 12p BCY590 2SC538A TBC337A BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B