2193A Search Results

Contextual Info: Ordering number: ENN7012 N-Channel Silicon MOSFET MCH6405 ISMÊYOl Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 2193A Specifications Absolute Maximum Ratings at Ta=25°C

MCH6307

Contextual Info: Ordering number : ENN7080 MCH6307 P-Channel Silicon MOSFET MCH6307 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2193A [MCH6307] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65

MCH6302

Contextual Info: Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2193A [MCH6302] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65

Contextual Info: Ordering number : ENN7080 MCH6307 MCH6307 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2193A [MCH6307] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6

N1003

Abstract: MCH6413 75531
Contextual Info: Ordering number : ENN7553 MCH6413 N-Channel Silicon MOSFET MCH6413 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6413] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6

MCH6302

Contextual Info: Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2193A [MCH6302] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65

MCH6402

Contextual Info: Ordering number : ENN6972 MCH6402 N-Channel Silicon MOSFET MCH6402 Ultrahigh-Speed Switching Applications Preliminary Features • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2193A [MCH6402] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65

MCH6405

Contextual Info: Ordering number : ENN7012 MCH6405 N-Channel Silicon MOSFET MCH6405 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6405] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6

IT05180

Abstract: MCH6406
Contextual Info: Ordering number : ENN7297 MCH6406 N-Channl Silicon MOSFET MCH6406 Ultrahigh-Speed Switching Applications Preliminary Features • unit : mm 2193A [MCH6406] 0.25 • Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 0.3 5 6 3 2 0.65 1 0.15 1.6 0.25 2.1

MCH6408

Abstract: O1002
Contextual Info: Ordering number : ENN7286 MCH6408 N-Channel Silicon MOSFET MCH6408 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6408] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6

Contextual Info: Ordering number: ENN6972~] N-Channel Silicon MOSFET MCH6402 'S A N Y O , Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • Low ON-resi stance. • Ultrahigh-speed switching. • 4V drive. 2193A Specifications Absolute Maximum Ratings at Ta=25°C

MARKING JH

Abstract: MCH6308
Contextual Info: Ordering number : ENN7620 MCH6308 P-Channel Silicon MOSFET MCH6308 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2193A [MCH6308] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

MHT5002

Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2sa501

Abstract: MM4647 2N1508 2SA482 USAF508ES021 2SA248 2SA478 TIP14 SI342P 1700N
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

74FCT193

Abstract: 2193T 74F193
Contextual Info: QSFCT193T, Q 2193T High-Speed CMOS Presettable Synchronous 4-Bit Binary Counters QS54/74FCT193T QS54/74FCT2193T F E A TU R E S /B E N E FIT S • • • • Pin and function compatible to the 74F193 74FCT193 and 74FCT193T CMOS power levels: <7.5 mW static

Contextual Info: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C

MG1200FXF1US51

Contextual Info: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C

MG1200FXF1US51

Abstract: IGBT Guide YG6260
Contextual Info: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E

MG1200FXF1US51

Abstract: YG6260
Contextual Info: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products