MG1200FXF1US51 Search Results

Contextual Info: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C

MG1200FXF1US51

Contextual Info: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C

MG1200FXF1US51

Abstract: IGBT Guide YG6260
Contextual Info: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E

MG1200FXF1US51

Abstract: YG6260
Contextual Info: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C

Contextual Info: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C

IEGT

Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
Contextual Info: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.