2N336 Search Results

2N3967

Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
Contextual Info: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

Contextual Info: 2N3368 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)10m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150# I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2N3365 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)4.0m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150# I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

JFET 2N3369

Abstract: 2n3369
Contextual Info: 2N3369 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)2.5m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150# I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

2N336

Abstract: ScansUX7
Contextual Info: TYPE 2N336 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 591 03 9, MARCH 1959 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded W elded case case with w ith gglass-to-metal lass-to -m etal hermetic

2N336

Contextual Info: ISCFdÈ, óf, óf text/html About News Contact keyword search: Employment Site Home part number search: 2N336 #68289 RFQ/Sample NPN Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Package TO-5(STD)

2N702

Abstract: 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A
Contextual Info: J325835_4 A D V A N C E D S E M I C O N D U C T O R 82 D n n n ^ Q SILICON ADVANCED T R A F ^ IST O R S 62 SEMICONDUCTOR P d @ T c =25°C POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A

2N5358

Abstract: nj16 2N3369 2N3370 2N3459 2n3459 nj16 2n5105 NJ32 2N3458 2N3460
Contextual Info: INT ER F E T CORP 2fc>E D • 4S2LSflö 0 0 0 0 1Ö 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiem Mm V Ig (nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 2N3821 2N3822 2N3967 2N3967A 2N3968 2N3968A 2N3969

2N335

Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
Contextual Info: MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,

2N336

Contextual Info: TYPE 2N336 N-P-N GROWN JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L - S 5 9 1 0 3 9 , M A R C H 1959 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. L nit weight is approximately

2N3370

Abstract: 2N3369 2N3368 siliconix to-18
Contextual Info: 2N 33 70 2N3368 2N3369 n-channel JFETs aesign ea ?or • • • S ilic o n ix Performance Curves N P see sections S m a ll-Sig n a l Low P o w e r Applications T O -1 8 See Se ction 7 ‘ ABSOLUTE M A X IM U M RA TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1) . . . . - 4 0 V

2n336

Abstract: LM390
Contextual Info: 2N336 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N336 Availability Online Store Diodes

2N3369

Abstract: 2N3370 JFET 2N3369 2N3368 2N3368-70 J201 equivalent 2N3436-8 2N3458-60 2N4338 2N4338-41
Contextual Info: 2N 3370 2N3369 Sm all-Signal Low P ow er Applications 2N3368 n-channel JFETs aesignea ?or • • • Siliconix Performance Curves NP see sections TO-18 See Section 7 ‘ ABSOLUTE M AXIM UM RATINGS 25°C Gate-Drain or Gate-Source Voltage (Note 1) . . . .-4 0 V

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

MP833

Abstract: e201 siliconix MPF4118 MPF4117 INTERFET SMP4117 TP3370 MP830 SMP3370 TP4119
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. VGS(Off) Max loss Max CI. Max PD Max (V) (A) Min (S) Max (V) (A) (F) (W) Derate at (WrC) Tope, Max (OC) Package Style N-Chann I JFETs, (Cont'd) 5 10 MPF4117A PN4117 PN4117A PN4117A PN4117A

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: ALL E GR O MICROSYSTEMS 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • G 5 0 4 3 3 Ô 0 Q 0 3 b l 3 1 ■ ALûR S E M I C O N D S / ICS 9 3 D 03 6 1 3 3> -T '2 -? -Z S METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

NF5458

Abstract: 2N4303 2N3369 2N5363 NF523 2n3367 2N5163 nf5457
Contextual Info: N-Channel FETs 9 neral purpose amps Type No. Case Style BVoss "BVOOO IVI M,n lass InAI Max VII Illmholl lOSS ImAI Min Max Min Max VploHI IVI Max C'u IpFI Max Cru IpFI Max NF IdBI I"en In nV.,fHl1 Max ProcIII No. 2N3069 TO•18 '50 1 2 10 1000 2500 10 15 4 52

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2n335

Abstract: 2n333
Contextual Info: INCH-POUND MIL-PRF-19500/37E w/AMENDMENT 1 16 December 2011 SUPERSEDING MIL-S-19500/37E 16 September 2001 The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 January 2012. * PERFORMANCE SPECIFICATION SHEET