2N3459 Search Results

Contextual Info: 2N3459 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A)4.0m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200# I(GSS) Max. (A)250p @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)4.0m

2N3458

Abstract: 2N3459 transistor 2N3458 2N3460
Contextual Info: Datasheet Central 2N3458 2N3459 2N3460 Sem icon du ctor Corp. N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors

2N3458

Abstract: 2N34B0 2N3459
Contextual Info: TYPES 2N3458, 2N3459. 2N3460 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 2 9 7 , A P R I L 1 9 7 0 FOR IN D U S T R IA L A N D CONSUMER SM A L L -S IG N A L, LOW-NOISE APPLICATIO N S •mechanical data T H E G A TE IS IN E L E C T R IC A L C O N T A C T W IT H T H E CASE

2n3459

Abstract: 2N3458 2N3460
Contextual Info: designed f o r Siliconix . Performance Curves N P See Sectiori 5 2N3459 • S m a ll-S ig n a l Low N o ise Am plifiers 2N3458 a n-channel JFETs B E N E F IT S • Operates from High Supply Voltages BVq s s > 5 0 V 2N3460 T O -1 8 See Se ctio n 7 • A B SO LU T E M A X IM U M R A T IN G S 25°C

2N3458

Abstract: 2N3459 2N3460 2N3368-70 2N3436-8 2N3458-60 2N4338 2N4338-41 2N5196-9 2N5545-47
Contextual Info: a S ilic o n ix Performance Curves N P See Sectiori 5 2N3459 • Sm all-Signal Low Noise Amplifiers 2N3458 n-channel JFETs designed for . BENEFITS • Operates from High Supply Voltages BV q s s > 5 0 V 2N3460 TO-18 See Section 7 •ABSOLUTE M AXIM UM RATINGS 25°C

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: ALL E GR O MICROSYSTEMS 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • G 5 0 4 3 3 Ô 0 Q 0 3 b l 3 1 ■ ALûR S E M I C O N D S / ICS 9 3 D 03 6 1 3 3> -T '2 -? -Z S METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2N3070

Abstract: 2N3066 2N3967 2N3437 2N3455 2N3822 JAN 2N3436 2N3089 2N3365
Contextual Info: ATAH LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Type Number Case Style (TO— 1 Geometr y •BVDgo oi BVgss Min (V Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) _ _ — — — — 9.5 4.5 2.2 9.5 4.5 1.0

2N3406

Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391

Contextual Info: SPR AGU E/SEMIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. T3 D • 0513050 G 0 D3 b l 3 2 93D 0361 3 3> S E M I C O N D S / ICS - r ~ z . ? - 7* s METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at Tfl = 25°C

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

TIS88A equivalent

Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.